Integrated circuit failure analysis by low-energy charge-induced voltage alteration

Title: Integrated circuit failure analysis by low-energy charge-induced voltage alteration

Abstract

A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs.

Inventors:

Cole, Jr., Edward I. ^[1]

(2116 White Cloud St., NE., Albuquerque, NM 87112)

Issue Date:: 1996-01-01

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 870444

Patent Number(s):: 5523694

Assignee:: Cole, Jr., Edward I. (2116 White Cloud St., NE., Albuquerque, NM 87112)

Patent Classifications (CPCs):: G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES

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G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
G01R31/307 - of integrated circuits

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: integrated; circuit; failure; analysis; low-energy; charge-induced; voltage; alteration; scanning; electron; microscope; apparatus; method; described; detecting; imaging; open-circuit; defects; high-current; focused; beam; scanned; device; surface; generate; civa; signal; location; image; energy; prevent; electrical; breakdown; passivation; layers; minimize; radiation; damage; production-line; inspection; ics; qualification; scanning electron; voltage alteration; passivation layer; device surface; electron microscope; electron beam; integrated circuit; beam energy; failure analysis; radiation damage; open-circuit defects; electrical breakdown; prevent electrical; microscope apparatus; focused electron; /324/

Citation Formats


                    Cole, Jr., Edward I. Integrated circuit failure analysis by low-energy charge-induced voltage alteration.  United States: N. p., 1996. 
        Web.

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                    Cole, Jr., Edward I. Integrated circuit failure analysis by low-energy charge-induced voltage alteration.  United States.

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                    Cole, Jr., Edward I. Mon .  
        "Integrated circuit failure analysis by low-energy charge-induced voltage alteration".  United States.  https://www.osti.gov/servlets/purl/870444.

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@article{osti_870444,

  title        = {Integrated circuit failure analysis by low-energy charge-induced voltage alteration},

  author       = {Cole, Jr., Edward I.},

  abstractNote = {A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1996},

  month        = {1}

}

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Works referenced in this record:

Rapid Localization of IC Open Conductors using Charge-Induced Voltage Alteration (CIVA)
conference, March 1992

Cole, Edward I.; Anderson, Richard E.
30th International Reliability Physics Symposium
https://doi.org/10.1109/IRPS.1992.363309

IC failure analysis: techniques and tools for quality reliability improvement
journal, May 1993

Soden, J. M.; Anderson, R. E.
Proceedings of the IEEE, Vol. 81, Issue 5
https://doi.org/10.1109/5.220902

A New Technique for Imaging the Logic State of Passivated Conductors: Biased Resistive Contrast Imaging
conference, March 1990

Cole, Edward I.
28th International Reliability Physics Symposium
https://doi.org/10.1109/IRPS.1990.363498

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Title: Integrated circuit failure analysis by low-energy charge-induced voltage alteration

Abstract

Citation Formats

Rapid Localization of IC Open Conductors using Charge-Induced Voltage Alteration (CIVA) conference, March 1992

IC failure analysis: techniques and tools for quality reliability improvement journal, May 1993

A New Technique for Imaging the Logic State of Passivated Conductors: Biased Resistive Contrast Imaging conference, March 1990

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conference, March 1992

IC failure analysis: techniques and tools for quality reliability improvement
journal, May 1993

A New Technique for Imaging the Logic State of Passivated Conductors: Biased Resistive Contrast Imaging
conference, March 1990