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Title: Preparation of III-V semiconductor nanocrystals

Abstract

Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

Inventors:
 [1];  [2]
  1. Berkeley, CA
  2. Brunswick, OH
Issue Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
Sponsoring Org.:
USDOE
OSTI Identifier:
870368
Patent Number(s):
5505928
Assignee:
Regents of University of California (Oakland, CA)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
preparation; iii-v; semiconductor; nanocrystals; nanometer-scale; crystals; semiconductors; disclosed; prepared; reacting; iii; metal; source; anion; liquid; phase; elevated; temperature; presence; crystallite; growth; terminator; pyridine; quinoline; semiconductor nanocrystals; elevated temperature; liquid phase; semiconductor nanocrystal; metal source; iii-v semiconductor; iii-v semiconductors; /423/117/420/

Citation Formats

Alivisatos, A Paul, and Olshavsky, Michael A. Preparation of III-V semiconductor nanocrystals. United States: N. p., 1996. Web.
Alivisatos, A Paul, & Olshavsky, Michael A. Preparation of III-V semiconductor nanocrystals. United States.
Alivisatos, A Paul, and Olshavsky, Michael A. Mon . "Preparation of III-V semiconductor nanocrystals". United States. https://www.osti.gov/servlets/purl/870368.
@article{osti_870368,
title = {Preparation of III-V semiconductor nanocrystals},
author = {Alivisatos, A Paul and Olshavsky, Michael A},
abstractNote = {Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}

Patent:

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