DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Preparation of III-V semiconductor nanocrystals

Abstract

Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

Inventors:
 [1];  [2]
  1. Berkeley, CA
  2. Brunswick, OH
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
870368
Patent Number(s):
5505928
Assignee:
Regents of University of California (Oakland, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
preparation; iii-v; semiconductor; nanocrystals; nanometer-scale; crystals; semiconductors; disclosed; prepared; reacting; iii; metal; source; anion; liquid; phase; elevated; temperature; presence; crystallite; growth; terminator; pyridine; quinoline; semiconductor nanocrystals; elevated temperature; liquid phase; semiconductor nanocrystal; metal source; iii-v semiconductor; iii-v semiconductors; /423/117/420/

Citation Formats

Alivisatos, A Paul, and Olshavsky, Michael A. Preparation of III-V semiconductor nanocrystals. United States: N. p., 1996. Web.
Alivisatos, A Paul, & Olshavsky, Michael A. Preparation of III-V semiconductor nanocrystals. United States.
Alivisatos, A Paul, and Olshavsky, Michael A. Mon . "Preparation of III-V semiconductor nanocrystals". United States. https://www.osti.gov/servlets/purl/870368.
@article{osti_870368,
title = {Preparation of III-V semiconductor nanocrystals},
author = {Alivisatos, A Paul and Olshavsky, Michael A},
abstractNote = {Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}

Works referenced in this record:

Lattice reorganization in electronically excited semiconductor clusters
journal, March 1990


Electron–vibration coupling in semiconductor clusters studied by resonance Raman spectroscopy
journal, April 1989


Organometallic synthesis of gallium-arsenide crystallites, exhibiting quantum confinement
journal, December 1990


Electronic states of semiconductor clusters: Homogeneous and inhomogeneous broadening of the optical spectrum
journal, October 1988


Electroabsorption of highly confined systems: Theory of the quantum‐confined Franz–Keldysh effect in semiconductor quantum wires and dots
journal, June 1988


Zero-dimensional "excitons" in semiconductor clusters
journal, September 1986


Resonance Raman scattering and optical absorption studies of CdSe microclusters at high pressure
journal, November 1988


Electronic wave functions in semiconductor clusters: experiment and theory
journal, June 1986


Design of a Monomeric Arsinogallane and Chemical Conversion to Gallium Arsenide
journal, July 1988


Theory of the linear and nonlinear optical properties of semiconductor microcrystallites
journal, May 1987


Relation between electroabsorption in bulk semiconductors and in quantum wells: The quantum-confined Franz-Keldysh effect
journal, May 1986


GaAs Clusters in the Quantum Size Regime: Growth on High Surface Area Silica by Molecular Beam Epitaxy
journal, July 1989