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Title: Preparation of III-V semiconductor nanocrystals

Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.
Inventors:
 [1];  [2]
  1. (Berkeley, CA)
  2. (Brunswick, OH)
Issue Date:
OSTI Identifier:
870368
Assignee:
Regents of University of California (Oakland, CA) OAK
Patent Number(s):
US 5505928
Contract Number:
AC03-76SF00098
Research Org:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
preparation; iii-v; semiconductor; nanocrystals; nanometer-scale; crystals; semiconductors; disclosed; prepared; reacting; iii; metal; source; anion; liquid; phase; elevated; temperature; presence; crystallite; growth; terminator; pyridine; quinoline; semiconductor nanocrystals; elevated temperature; liquid phase; semiconductor nanocrystal; metal source; iii-v semiconductor; iii-v semiconductors; /423/117/420/

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