Method for continuous control of composition and doping of pulsed laser deposited films by pressure control
Abstract
A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a deposition chamber and a low-pressure gas atmosphere is developed within the chamber. The substrate is then heated, and the target is irradiated, so that atoms of the target material are ablated from the remainder of the target, while atoms of the gas simultaneously are adsorbed on the substrate/film surface. The ablated atoms build up upon the substrate, together with the adsorbed gas atoms to form the thin-film deposit on the substrate. By controlling the pressure of the gas of the chamber atmosphere, the composition of the formed deposit can be controlled, and films of continuously variable composition or doping can be grown from a single target of fixed composition.
- Inventors:
-
- Knoxville, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 870344
- Patent Number(s):
- 5499599
- Assignee:
- Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; continuous; control; composition; doping; pulsed; laser; deposited; films; pressure; growing; deposit; substrate; semiconductor; material; involves; utilization; deposition; techniques; low-pressure; gas; environment; target; positioned; chamber; atmosphere; developed; heated; irradiated; atoms; ablated; remainder; simultaneously; adsorbed; film; surface; build; form; thin-film; controlling; formed; controlled; continuously; variable; grown; single; fixed; gas environment; low-pressure gas; deposition chamber; pressure gas; semiconductor material; pulsed laser; gas atmosphere; target material; deposition techniques; continuously variable; deposited films; gas atoms; laser deposition; single target; film surface; deposition technique; pressure control; deposited film; thin-film deposit; target mater; adsorbed gas; material involves; laser deposited; continuous control; /117/204/427/438/
Citation Formats
Lowndes, Douglas H, and McCamy, James W. Method for continuous control of composition and doping of pulsed laser deposited films by pressure control. United States: N. p., 1996.
Web.
Lowndes, Douglas H, & McCamy, James W. Method for continuous control of composition and doping of pulsed laser deposited films by pressure control. United States.
Lowndes, Douglas H, and McCamy, James W. Mon .
"Method for continuous control of composition and doping of pulsed laser deposited films by pressure control". United States. https://www.osti.gov/servlets/purl/870344.
@article{osti_870344,
title = {Method for continuous control of composition and doping of pulsed laser deposited films by pressure control},
author = {Lowndes, Douglas H and McCamy, James W},
abstractNote = {A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a deposition chamber and a low-pressure gas atmosphere is developed within the chamber. The substrate is then heated, and the target is irradiated, so that atoms of the target material are ablated from the remainder of the target, while atoms of the gas simultaneously are adsorbed on the substrate/film surface. The ablated atoms build up upon the substrate, together with the adsorbed gas atoms to form the thin-film deposit on the substrate. By controlling the pressure of the gas of the chamber atmosphere, the composition of the formed deposit can be controlled, and films of continuously variable composition or doping can be grown from a single target of fixed composition.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1996},
month = {Mon Jan 01 00:00:00 EST 1996}
}
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Works referenced in this record:
Preparation of oriented silicon carbide films by laser ablation of ceramic silicon carbide targets
journal, October 1991
- Rimai, L.; Ager, R.; Logothetis, E. M.
- Applied Physics Letters, Vol. 59, Issue 18
Deposition of SiC films by pulsed excimer laser ablation
journal, October 1990
- Balooch, M.; Tench, R. J.; Siekhaus, W. J.
- Applied Physics Letters, Vol. 57, Issue 15