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Title: Method for gas bubble and void control and removal from metals

Abstract

A method for enhancing the diffusion of gas bubbles or voids attached to impurity precipitates, and biasing their direction of migration out of the host metal (or metal alloy) by applying a temperature gradient across the host metal (or metal alloy). In the preferred embodiment of the present invention, the impurity metal is insoluble in the host metal and has a melting point lower than the melting point of the host material. Also, preferably the impurity metal is lead or indium and the host metal is aluminum or a metal alloy.

Inventors:
 [1];  [1]
  1. Idaho Falls, ID
Issue Date:
Research Org.:
EG & G IDAHO INC
OSTI Identifier:
870286
Patent Number(s):
5490187
Assignee:
Lockheed Idaho Technologies Company (Idaho Falls, ID)
DOE Contract Number:  
AC07-76ID01570
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; gas; bubble; void; control; removal; metals; enhancing; diffusion; bubbles; voids; attached; impurity; precipitates; biasing; direction; migration; host; metal; alloy; applying; temperature; gradient; preferred; embodiment; insoluble; melting; material; preferably; lead; indium; aluminum; gas bubbles; temperature gradient; preferred embodiment; metal alloy; gas bubble; host material; purity metal; /376/

Citation Formats

Van Siclen, Clinton D, and Wright, Richard N. Method for gas bubble and void control and removal from metals. United States: N. p., 1996. Web.
Van Siclen, Clinton D, & Wright, Richard N. Method for gas bubble and void control and removal from metals. United States.
Van Siclen, Clinton D, and Wright, Richard N. Mon . "Method for gas bubble and void control and removal from metals". United States. https://www.osti.gov/servlets/purl/870286.
@article{osti_870286,
title = {Method for gas bubble and void control and removal from metals},
author = {Van Siclen, Clinton D and Wright, Richard N},
abstractNote = {A method for enhancing the diffusion of gas bubbles or voids attached to impurity precipitates, and biasing their direction of migration out of the host metal (or metal alloy) by applying a temperature gradient across the host metal (or metal alloy). In the preferred embodiment of the present invention, the impurity metal is insoluble in the host metal and has a melting point lower than the melting point of the host material. Also, preferably the impurity metal is lead or indium and the host metal is aluminum or a metal alloy.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}

Patent:

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