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Title: Silicon on insulator with active buried regions

Abstract

A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

Inventors:
 [1]
  1. Menlo Park, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
870276
Patent Number(s):
5488012
Assignee:
Regents of University of California (Oakland, CA)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
silicon; insulator; active; buried; regions; method; forming; patterned; components; collectors; sources; drains; silicon-on-insulator; soi; devices; carried; epitaxially; growing; suitable; sequence; single; multiple; etch; stop; layers; layer; substrate; masking; desired; pattern; exposed; introducing; dopant; activating; form; doped; bonding; removing; additionally; involves; electrical; contact; etch stop; top layer; silicon layer; electrical contact; silicon substrate; involves forming; desired pattern; stop layer; method additionally; insulator substrate; doped regions; forming electrical; patterned buried; epitaxially growing; introducing dopant; suitable sequence; forming patterned; buried regions; buried components; active buried; /438/148/

Citation Formats

McCarthy, Anthony M. Silicon on insulator with active buried regions. United States: N. p., 1996. Web.
McCarthy, Anthony M. Silicon on insulator with active buried regions. United States.
McCarthy, Anthony M. Mon . "Silicon on insulator with active buried regions". United States. https://www.osti.gov/servlets/purl/870276.
@article{osti_870276,
title = {Silicon on insulator with active buried regions},
author = {McCarthy, Anthony M},
abstractNote = {A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}

Works referenced in this record:

A technology for high-performance single-crystal silicon-on-insulator transistors
journal, April 1987


Low-temperature fabrication of p/sup +/-n diodes with 300-AA junction depth
journal, July 1992


Laser crystallization of Si films on glass
journal, March 1982


Nanosecond Thermal Processing for Ultra-High-Speed Device Technology
journal, January 1989


Silicon-on-insulator (SOI) by bonding and ETCH-back
conference, January 1985