Silicon on insulator with active buried regions
Abstract
A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.
- Inventors:
-
- Menlo Park, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 870276
- Patent Number(s):
- 5488012
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- silicon; insulator; active; buried; regions; method; forming; patterned; components; collectors; sources; drains; silicon-on-insulator; soi; devices; carried; epitaxially; growing; suitable; sequence; single; multiple; etch; stop; layers; layer; substrate; masking; desired; pattern; exposed; introducing; dopant; activating; form; doped; bonding; removing; additionally; involves; electrical; contact; etch stop; top layer; silicon layer; electrical contact; silicon substrate; involves forming; desired pattern; stop layer; method additionally; insulator substrate; doped regions; forming electrical; patterned buried; epitaxially growing; introducing dopant; suitable sequence; forming patterned; buried regions; buried components; active buried; /438/148/
Citation Formats
McCarthy, Anthony M. Silicon on insulator with active buried regions. United States: N. p., 1996.
Web.
McCarthy, Anthony M. Silicon on insulator with active buried regions. United States.
McCarthy, Anthony M. Mon .
"Silicon on insulator with active buried regions". United States. https://www.osti.gov/servlets/purl/870276.
@article{osti_870276,
title = {Silicon on insulator with active buried regions},
author = {McCarthy, Anthony M},
abstractNote = {A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}
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