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Title: Silicon on insulator with active buried regions

A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.
Inventors:
 [1]
  1. (Menlo Park, CA)
Issue Date:
OSTI Identifier:
870276
Assignee:
Regents of University of California (Oakland, CA) LLNL
Patent Number(s):
US 5488012
Contract Number:
W-7405-ENG-48
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Country of Publication:
United States
Language:
English
Subject:
silicon; insulator; active; buried; regions; method; forming; patterned; components; collectors; sources; drains; silicon-on-insulator; soi; devices; carried; epitaxially; growing; suitable; sequence; single; multiple; etch; stop; layers; layer; substrate; masking; desired; pattern; exposed; introducing; dopant; activating; form; doped; bonding; removing; additionally; involves; electrical; contact; etch stop; top layer; silicon layer; electrical contact; silicon substrate; involves forming; desired pattern; stop layer; method additionally; insulator substrate; doped regions; forming electrical; patterned buried; epitaxially growing; introducing dopant; suitable sequence; forming patterned; buried regions; buried components; active buried; /438/148/