Process for producing large grain cadmium telluride
Abstract
A process for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 .mu.m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10.sup.-6 torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 .mu.m.
- Inventors:
-
- Arvada, CO
- Longmont, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 870258
- Patent Number(s):
- 5484736
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; producing; grain; cadmium; telluride; polycrystalline; film; sizes; 20; comprises; providing; substrate; deposited; placing; vacuum; chamber; containing; effusion; cell; steps; evacuating; pressure; 10; -6; torr; heating; temperature; whereat; releases; stoichiometric; amounts; usable; molecular; beam; source; growth; grains; releasing; deposition; placed; furnace; inert; gas; atmosphere; heated; sufficient; period; time; annealing; grow; polycrystalline film; stoichiometric amounts; comprises providing; vacuum chamber; inert gas; grain size; process comprises; beam source; chamber containing; molecular beam; gas atmosphere; cadmium telluride; stoichiometric amount; sufficient period; annealing temperature; grain sizes; /438/136/148/
Citation Formats
Hasoon, Falah S, and Nelson, Art J. Process for producing large grain cadmium telluride. United States: N. p., 1996.
Web.
Hasoon, Falah S, & Nelson, Art J. Process for producing large grain cadmium telluride. United States.
Hasoon, Falah S, and Nelson, Art J. Mon .
"Process for producing large grain cadmium telluride". United States. https://www.osti.gov/servlets/purl/870258.
@article{osti_870258,
title = {Process for producing large grain cadmium telluride},
author = {Hasoon, Falah S and Nelson, Art J},
abstractNote = {A process for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 .mu.m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10.sup.-6 torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 .mu.m.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}
Works referenced in this record:
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Large grained CdTe layers; feasibility as an all-thin-film solar cell
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