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Title: Process for producing large grain cadmium telluride

A process for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 .mu.m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10.sup.-6 torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 .mu.m.
Inventors:
 [1];  [2]
  1. (Arvada, CO)
  2. (Longmont, CO)
Issue Date:
OSTI Identifier:
870258
Assignee:
Midwest Research Institute (Kansas City, MO) NREL
Patent Number(s):
US 5484736
Contract Number:
AC36-83CH10093
Research Org:
Midwest Research Institute
Country of Publication:
United States
Language:
English
Subject:
process; producing; grain; cadmium; telluride; polycrystalline; film; sizes; 20; comprises; providing; substrate; deposited; placing; vacuum; chamber; containing; effusion; cell; steps; evacuating; pressure; 10; -6; torr; heating; temperature; whereat; releases; stoichiometric; amounts; usable; molecular; beam; source; growth; grains; releasing; deposition; placed; furnace; inert; gas; atmosphere; heated; sufficient; period; time; annealing; grow; polycrystalline film; stoichiometric amounts; comprises providing; vacuum chamber; inert gas; grain size; process comprises; beam source; chamber containing; molecular beam; gas atmosphere; cadmium telluride; stoichiometric amount; sufficient period; annealing temperature; grain sizes; /438/136/148/

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