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Title: Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process

A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By selecting metal constituents for the oxides and in the appropriate proportions so that the lattice parameter of each oxide grown closely approximates that of the substrate or base layer upon which oxide is grown, lattice strain at the film/film or film/substrate interface of adjacent films is appreciably reduced or relieved. Moreover, by selecting constituents for the oxides so that the lattice parameters of the materials of adjacent oxide films either increase or decrease in size from one parameter to another parameter, a graded layup of films can be grown (with reduced strain levels therebetween) so that the outer film has a lattice parameter which closely approximates that of, and thus accomodates the epitaxial growth of, a pervoskite chosen to be grown upon the outer film.
 [1];  [2]
  1. (Kingston, TN)
  2. (Oak Ridge, TN)
Issue Date:
OSTI Identifier:
Martin Marietta Energy Systems, Inc. (Oak Ridge, TN) ORNL
Patent Number(s):
US 5482003
Contract Number:
Research Org:
Country of Publication:
United States
process; depositing; epitaxial; alkaline; earth; oxide; substrate; structures; prepared; structure; involving; silicon; utilize; molecular; beam; epitaxy; electron; evaporation; methods; ultra-high; vacuum; facility; grow; layup; films; surface; selecting; metal; constituents; oxides; appropriate; proportions; lattice; parameter; grown; closely; approximates; base; layer; strain; film; interface; adjacent; appreciably; reduced; relieved; moreover; parameters; materials; increase; decrease; size; graded; levels; therebetween; outer; accomodates; growth; pervoskite; chosen; earth oxide; oxide films; metal constituents; electron beam; alkaline earth; silicon substrate; substrate surface; molecular beam; base layer; oxide film; epitaxial growth; ultra-high vacuum; beam epitaxy; substrate interface; metal constituent; lattice parameter; structures prepared; structure involving; lattice strain; substrate utilize; beam evaporation; /117/148/427/