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Title: Multi-phase back contacts for CIS solar cells

Abstract

Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe.sub.2 where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0.01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS. Narrower Cu and/or Ga regions, and those with fewer inner connections between regions, leach out more slowly during the subsequent CIS deposition. This gives a good mechanical and electrical interlock of the CIS layer into the Cu/Ga-Mo backmore » layer. Solar cells employing In-rich CIS semiconductors bonded to the multi-phase columnar microstructure back layer of this invention exhibit vastly improved photo-electrical conversion on the order of 17% greater than Mo alone, improved uniformity of output across the face of the cell, and greater Fill Factor.« less

Inventors:
 [1];  [2]
  1. (505 Park Haven Ct., Champaign, IL 61820)
  2. (1107 W. Green St. #328, Urbana, IL 61801)
Issue Date:
Research Org.:
Midwest Research Institute
Sponsoring Org.:
USDOE
OSTI Identifier:
870215
Patent Number(s):
5477088
Assignee:
Rockett, Angus A. (505 Park Haven Ct., Champaign, IL 61820);Yang, Li-Chung (1107 W. Green St. #328, Urbana, IL 61801) CHO
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
multi-phase; contacts; cis; solar; cells; single; layer; non-interdiffusing; m-mo; contact; metallized; films; selected; cu; mixtures; deposited; sputtering; process; suitable; substrates; preferably; glass; alumina; prevent; delamination; typical; compositions; cuxse; mixture; substrate; manner; provide; columnar; microstructure; micro-vein; regions; partially; vertically; penetrate; entire; semiconductor; hybrid; evaporation; ga-mo; deposition; controlled; produce; two-phase; morphology; controllable; vein; size; 01; microns; width; subsequent; molybdenum; tend; leach; replaced; columns; narrower; fewer; inner; connections; slowly; mechanical; electrical; interlock; employing; in-rich; semiconductors; bonded; exhibit; vastly; improved; photo-electrical; conversion; 17; uniformity; output; cell; fill; factor; contact layer; cells employing; electrical conversion; subsequent deposition; single layer; solar cell; solar cells; semiconductor layer; suitable substrate; vastly improved; multi-phase mixture; sputtering process; phase mixture; evaporation process; prevent delamination; fill factor; metallized film; /257/136/

Citation Formats

Rockett, Angus A., and Yang, Li-Chung. Multi-phase back contacts for CIS solar cells. United States: N. p., 1995. Web.
Rockett, Angus A., & Yang, Li-Chung. Multi-phase back contacts for CIS solar cells. United States.
Rockett, Angus A., and Yang, Li-Chung. Sun . "Multi-phase back contacts for CIS solar cells". United States. https://www.osti.gov/servlets/purl/870215.
@article{osti_870215,
title = {Multi-phase back contacts for CIS solar cells},
author = {Rockett, Angus A. and Yang, Li-Chung},
abstractNote = {Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe.sub.2 where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0.01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS. Narrower Cu and/or Ga regions, and those with fewer inner connections between regions, leach out more slowly during the subsequent CIS deposition. This gives a good mechanical and electrical interlock of the CIS layer into the Cu/Ga-Mo back layer. Solar cells employing In-rich CIS semiconductors bonded to the multi-phase columnar microstructure back layer of this invention exhibit vastly improved photo-electrical conversion on the order of 17% greater than Mo alone, improved uniformity of output across the face of the cell, and greater Fill Factor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}

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