Multi-phase back contacts for CIS solar cells
Abstract
Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe.sub.2 where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0.01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS. Narrower Cu and/or Ga regions, and those with fewer inner connections between regions, leach out more slowly during the subsequent CIS deposition. This gives a good mechanical and electrical interlock of the CIS layer into the Cu/Ga-Mo backmore »
- Inventors:
-
- 505 Park Haven Ct., Champaign, IL 61820
- 1107 W. Green St. #328, Urbana, IL 61801
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 870215
- Patent Number(s):
- 5477088
- Assignee:
- Rockett, Angus A. (505 Park Haven Ct., Champaign, IL 61820);Yang, Li-Chung (1107 W. Green St. #328, Urbana, IL 61801)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- multi-phase; contacts; cis; solar; cells; single; layer; non-interdiffusing; m-mo; contact; metallized; films; selected; cu; mixtures; deposited; sputtering; process; suitable; substrates; preferably; glass; alumina; prevent; delamination; typical; compositions; cuxse; mixture; substrate; manner; provide; columnar; microstructure; micro-vein; regions; partially; vertically; penetrate; entire; semiconductor; hybrid; evaporation; ga-mo; deposition; controlled; produce; two-phase; morphology; controllable; vein; size; 01; microns; width; subsequent; molybdenum; tend; leach; replaced; columns; narrower; fewer; inner; connections; slowly; mechanical; electrical; interlock; employing; in-rich; semiconductors; bonded; exhibit; vastly; improved; photo-electrical; conversion; 17; uniformity; output; cell; fill; factor; contact layer; cells employing; electrical conversion; subsequent deposition; single layer; solar cell; solar cells; semiconductor layer; suitable substrate; vastly improved; multi-phase mixture; sputtering process; phase mixture; evaporation process; prevent delamination; fill factor; metallized film; /257/136/
Citation Formats
Rockett, Angus A, and Yang, Li-Chung. Multi-phase back contacts for CIS solar cells. United States: N. p., 1995.
Web.
Rockett, Angus A, & Yang, Li-Chung. Multi-phase back contacts for CIS solar cells. United States.
Rockett, Angus A, and Yang, Li-Chung. Sun .
"Multi-phase back contacts for CIS solar cells". United States. https://www.osti.gov/servlets/purl/870215.
@article{osti_870215,
title = {Multi-phase back contacts for CIS solar cells},
author = {Rockett, Angus A and Yang, Li-Chung},
abstractNote = {Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe.sub.2 where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0.01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS. Narrower Cu and/or Ga regions, and those with fewer inner connections between regions, leach out more slowly during the subsequent CIS deposition. This gives a good mechanical and electrical interlock of the CIS layer into the Cu/Ga-Mo back layer. Solar cells employing In-rich CIS semiconductors bonded to the multi-phase columnar microstructure back layer of this invention exhibit vastly improved photo-electrical conversion on the order of 17% greater than Mo alone, improved uniformity of output across the face of the cell, and greater Fill Factor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}
Works referenced in this record:
Growth of CuInSe2 by two magnetron sputtering techniques
journal, April 1989
- Rockett, A.; Lommasson, T. C.; Campos, P.
- Thin Solid Films, Vol. 171, Issue 1
CuInSe 2 for photovoltaic applications
journal, October 1991
- Rockett, A.; Birkmire, R. W.
- Journal of Applied Physics, Vol. 70, Issue 7