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Title: Optimized ECR plasma apparatus with varied microwave window thickness

Abstract

The present invention describes a technique to control the radial profile of microwave power in an ECR plasma discharge. In order to provide for a uniform plasma density to a specimen, uniform energy absorption by the plasma is desired. By controlling the radial profile of the microwave power transmitted through the microwave window of a reactor, the profile of the transmitted energy to the plasma can be controlled in order to have uniform energy absorption by the plasma. An advantage of controlling the profile using the window transmission characteristics is that variations to the radial profile of microwave power can be made without changing the microwave coupler or reactor design.

Inventors:
 [1]
  1. Oak Ridge, TN
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
870156
Patent Number(s):
5466991
Assignee:
Sematech, Inc. (Austin, TX)
Patent Classifications (CPCs):
F - MECHANICAL ENGINEERING F16 - ENGINEERING ELEMENTS AND UNITS F16B - DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS, WEDGES, JOINTS OR JOINTING
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
optimized; ecr; plasma; apparatus; varied; microwave; window; thickness; describes; technique; control; radial; profile; power; discharge; provide; uniform; density; specimen; energy; absorption; desired; controlling; transmitted; reactor; controlled; advantage; transmission; characteristics; variations; changing; coupler; design; reactor design; radial profile; plasma density; ecr plasma; microwave window; transmission characteristics; uniform energy; uniform plasma; plasma discharge; energy absorption; microwave power; wave coupler; power transmitted; microwave coupler; plasma apparatus; /315/118/

Citation Formats

Berry, Lee A. Optimized ECR plasma apparatus with varied microwave window thickness. United States: N. p., 1995. Web.
Berry, Lee A. Optimized ECR plasma apparatus with varied microwave window thickness. United States.
Berry, Lee A. Sun . "Optimized ECR plasma apparatus with varied microwave window thickness". United States. https://www.osti.gov/servlets/purl/870156.
@article{osti_870156,
title = {Optimized ECR plasma apparatus with varied microwave window thickness},
author = {Berry, Lee A},
abstractNote = {The present invention describes a technique to control the radial profile of microwave power in an ECR plasma discharge. In order to provide for a uniform plasma density to a specimen, uniform energy absorption by the plasma is desired. By controlling the radial profile of the microwave power transmitted through the microwave window of a reactor, the profile of the transmitted energy to the plasma can be controlled in order to have uniform energy absorption by the plasma. An advantage of controlling the profile using the window transmission characteristics is that variations to the radial profile of microwave power can be made without changing the microwave coupler or reactor design.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}

Works referenced in this record:

Optimized microwave coupling in an electron cyclotron resonance etch tool
journal, May 1991

  • Stevens, J. E.; Cecchi, J. L.; Huang, Y. C.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 9, Issue 3
  • https://doi.org/10.1116/1.577346

Electron cyclotron resonance microwave ion sources for thin film processing
journal, May 1991


Extremely high selective, highly anisotropic, and high rate electron cyclotron resonance plasma etching for n+ poly-Si at the electron cyclotron resonance position
journal, November 1990


Electron cyclotron resonance microwave discharges for etching and thin‐film deposition
journal, May 1989


Behavior of Ar plasmas formed in a mirror field electron cyclotron resonance microwave ion source
journal, May 1990

  • Gorbatkin, S. M.; Berry, L. A.; Roberto, J. B.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 8, Issue 3
  • https://doi.org/10.1116/1.576645