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Title: Asymmetrical field emitter

Abstract

Providing a field emitter with an asymmetrical emitter structure having a very sharp tip in close proximity to its gate. One preferred embodiment of the present invention includes an asymmetrical emitter and a gate. The emitter having a tip and a side is coupled to a substrate. The gate is connected to a step in the substrate. The step has a top surface and a side wall that is substantially parallel to the side of the emitter. The tip of the emitter is in close proximity to the gate. The emitter is at an emitter potential, and the gate is at a gate potential such that with the two potentials at appropriate values, electrons are emitted from the emitter. In one embodiment, the gate is separated from the emitter by an oxide layer, and the emitter is etched anisotropically to form its tip and its asymmetrical structure.

Inventors:
 [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
AT&T
OSTI Identifier:
870112
Patent Number(s):
5457355
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
asymmetrical; field; emitter; providing; structure; sharp; tip; close; proximity; gate; preferred; embodiment; coupled; substrate; connected; step; top; surface; wall; substantially; parallel; potential; potentials; appropriate; values; electrons; emitted; separated; oxide; layer; etched; anisotropically; form; top surface; close proximity; preferred embodiment; oxide layer; substantially parallel; field emitter; emitter structure; appropriate values; asymmetrical emitter; /313/

Citation Formats

Fleming, James G, and Smith, Bradley K. Asymmetrical field emitter. United States: N. p., 1995. Web.
Fleming, James G, & Smith, Bradley K. Asymmetrical field emitter. United States.
Fleming, James G, and Smith, Bradley K. Sun . "Asymmetrical field emitter". United States. https://www.osti.gov/servlets/purl/870112.
@article{osti_870112,
title = {Asymmetrical field emitter},
author = {Fleming, James G and Smith, Bradley K},
abstractNote = {Providing a field emitter with an asymmetrical emitter structure having a very sharp tip in close proximity to its gate. One preferred embodiment of the present invention includes an asymmetrical emitter and a gate. The emitter having a tip and a side is coupled to a substrate. The gate is connected to a step in the substrate. The step has a top surface and a side wall that is substantially parallel to the side of the emitter. The tip of the emitter is in close proximity to the gate. The emitter is at an emitter potential, and the gate is at a gate potential such that with the two potentials at appropriate values, electrons are emitted from the emitter. In one embodiment, the gate is separated from the emitter by an oxide layer, and the emitter is etched anisotropically to form its tip and its asymmetrical structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}

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Works referenced in this record:

Gated chromium volcano emitters
journal, March 1994