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Title: Surface passivation process of compound semiconductor material using UV photosulfidation

Abstract

A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

Inventors:
 [1]
  1. Edgewood, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
870072
Patent Number(s):
5451542
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-76
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
surface; passivation; process; compound; semiconductor; material; photosulfidation; method; passivating; surfaces; photolytically; disrupting; molecular; sulfur; vapor; ultraviolet; radiation; form; reactive; reacts; passivates; semiconductors; surface passivation; compound semiconductors; ultraviolet radiation; semiconductor material; semiconductor surface; compound semiconductor; semiconductor surfaces; passivation process; surface pass; /438/

Citation Formats

Ashby, Carol I. H.. Surface passivation process of compound semiconductor material using UV photosulfidation. United States: N. p., 1995. Web.
Ashby, Carol I. H.. Surface passivation process of compound semiconductor material using UV photosulfidation. United States.
Ashby, Carol I. H.. Sun . "Surface passivation process of compound semiconductor material using UV photosulfidation". United States. https://www.osti.gov/servlets/purl/870072.
@article{osti_870072,
title = {Surface passivation process of compound semiconductor material using UV photosulfidation},
author = {Ashby, Carol I. H.},
abstractNote = {A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}

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Works referenced in this record:

Ultraviolet photosulfidation of III‐V compound semiconductors: A new approach to surface passivation
journal, May 1994


Nearly ideal electronic properties of sulfide coated GaAs surfaces
journal, August 1987


Ultraviolet photoemission studies of GaAs(100) surfaces chemically stabilized by H2S treatments
journal, July 1989


Ultraviolet photosulfidation of III–V compound semiconductors for electronic passivation
journal, July 1994

  • Zavadil, Kevin R.; Ashby, Carol I. H.; Howard, Arnold J.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, Issue 4
  • https://doi.org/10.1116/1.579282