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Title: Process for growing a film epitaxially upon an oxide surface and structures formed with the process

Abstract

A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Inventors:
 [1];  [2]
  1. Kingston, TN
  2. Oak Ridge, TN
Issue Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN
OSTI Identifier:
870067
Patent Number(s):
5450812
Assignee:
Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; growing; film; epitaxially; oxide; surface; structures; formed; structure; comprised; perovskite; spinel; built; alkaline; earth; involves; epitaxial; build; alternating; constituent; metal; planes; layer; element; provides; cation; crystalline; layering; sequence; involved; reduces; otherwise; result; interfacial; electrostatics; atomic; layers; oxides; stabilized; commensurate; films; unit; cell; thickness; grown; crystal; quality; thicknesses; 5-0; optical; device; applications; structures formed; atomic layers; oxide built; cell thickness; sequence involved; crystal quality; layering sequence; oxide surface; earth oxide; device applications; metal element; metal oxide; alkaline earth; optical device; crystalline structure; otherwise result; unit cell; built epitaxially; oxide planes; alternating constituent; epitaxial build; interfacial electrostatics; film build; film epitaxially; film comprised; constituent metal; line structure; /117/427/438/

Citation Formats

McKee, Rodney A, and Walker, Frederick J. Process for growing a film epitaxially upon an oxide surface and structures formed with the process. United States: N. p., 1995. Web.
McKee, Rodney A, & Walker, Frederick J. Process for growing a film epitaxially upon an oxide surface and structures formed with the process. United States.
McKee, Rodney A, and Walker, Frederick J. Sun . "Process for growing a film epitaxially upon an oxide surface and structures formed with the process". United States. https://www.osti.gov/servlets/purl/870067.
@article{osti_870067,
title = {Process for growing a film epitaxially upon an oxide surface and structures formed with the process},
author = {McKee, Rodney A and Walker, Frederick J},
abstractNote = {A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}

Patent:

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