Silicon metal-semiconductor-metal photodetector

Brueck, Steven R. J.; Myers, David R; Sharma, Ashwani K

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Title: Silicon metal-semiconductor-metal photodetector

Abstract

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Inventors:

Brueck, Steven R. J. ^[1]; Myers, David R ^[1]; Sharma, Ashwani K ^[1]

Albuquerque, NM

Issue Date:: 1995-01-01

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 870065

Patent Number(s):: 5449945

Assignee:: United States of America as represented by U.S. Department of (Washington, DC)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/1085 - {the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type}

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DOE Contract Number:: AC04-76

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: silicon; metal-semiconductor-metal; photodetector; msm; photodiodes; sensitive; radiation; visible; near; infrared; spectral; range; produced; altering; absorption; characteristics; crystalline; implantation; produces; defected; region; below; surface; concentration; defects; base; reduce; contribution; charge; carriers; formed; layer; generated; upper; regions; quickly; collected; biased; schottky; barrier; electrodes; form; structure; photodiode; upper regions; absorption characteristics; charge carrier; spectral range; near infrared; charge carriers; schottky barrier; upper region; silicon metal; region below; carriers formed; carriers generated; metal structure; infrared spectral; silicon msm; silicon metal-semiconductor-metal; metal-semiconductor-metal photodetector; msm photodiodes; formed below; photodiodes sensitive; /257/

Citation Formats


                    Brueck, Steven R. J., Myers, David R, and Sharma, Ashwani K. Silicon metal-semiconductor-metal photodetector.  United States: N. p., 1995. 
        Web.

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                    Brueck, Steven R. J., Myers, David R, & Sharma, Ashwani K. Silicon metal-semiconductor-metal photodetector.  United States.

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                    Brueck, Steven R. J., Myers, David R, and Sharma, Ashwani K. Sun .  
        "Silicon metal-semiconductor-metal photodetector".  United States.  https://www.osti.gov/servlets/purl/870065.

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@article{osti_870065,

  title        = {Silicon metal-semiconductor-metal photodetector},

  author       = {Brueck, Steven R. J. and Myers, David R and Sharma, Ashwani K},

  abstractNote = {Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1995},

  month        = {1}

}

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Works referenced in this record:

Ion dose effect in subgap absorption spectra of defects in ion implanted GaAs and Si
journal, December 1991

Zammit, U.; Gasparrini, F.; Marinelli, M.
Journal of Applied Physics, Vol. 70, Issue 11
https://doi.org/10.1063/1.349785

Electrical and structural properties of silicon layers heavily damaged by ion implantation
journal, July 1992

Boussey‐Said, J.; Ghibaudo, G.; Stoemenos, I.
Journal of Applied Physics, Vol. 72, Issue 1
https://doi.org/10.1063/1.352147

A simple high-speed Si Schottky photodiode
journal, April 1991

Mullins, B. W.; Soares, S. F.; McArdle, K. A.
IEEE Photonics Technology Letters, Vol. 3, Issue 4
https://doi.org/10.1109/68.82112

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Similar Records

Title: Silicon metal-semiconductor-metal photodetector

Abstract

Citation Formats

Ion dose effect in subgap absorption spectra of defects in ion implanted GaAs and Si journal, December 1991

Electrical and structural properties of silicon layers heavily damaged by ion implantation journal, July 1992

A simple high-speed Si Schottky photodiode journal, April 1991

Ion dose effect in subgap absorption spectra of defects in ion implanted GaAs and Si
journal, December 1991

Electrical and structural properties of silicon layers heavily damaged by ion implantation
journal, July 1992

A simple high-speed Si Schottky photodiode
journal, April 1991