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Title: Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

Abstract

A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure formore » an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

Inventors:
 [1];  [2];  [1];  [3];  [4];  [3];  [1]
+ Show Inventor Affiliations
  1. Denver, CO
  2. Evergreen, CO
  3. Golden, CO
  4. Boulder, CO
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
OSTI Identifier:
870002
Patent Number(s):
5436204
Application Number:
08/293,826
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
recrystallization; method; selenization; thin-film; cu; semiconductor; device; applications; process; fabricating; slightly; cu-poor; thin-films; substrate; steps; forming; initially; cu-rich; phase; separated; mixture; solid; form; followed; exposure; overpressure; vapor; deposition; simultaneously; increasing; temperature; 550; degree; liquid; flux; terminated; maintained; recrystallize; deposited; transition; z; initial; grain; sequentially; depositing; co-depositing; metal; precursors; ramping; presence; moderate; anneal; 450; holding; annealing; period; nonselenizing; 100; homogenize; substrates; selenizing; slightly cu-poor; phase separated; metal precursor; film temperature; solid form; device applications; semiconductor device; solid mixture; moderate temperature; recrystallization temperature; temperature anneal; rate temperature; metal precursors; phase separate; /438/117/136/

Citation Formats

Albin, David S, Carapella, Jeffrey J, Tuttle, John R, Contreras, Miguel A, Gabor, Andrew M, Noufi, Rommel, and Tennant, Andrew L. Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications. United States: N. p., 1995. Web.
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Albin, David S, Carapella, Jeffrey J, Tuttle, John R, Contreras, Miguel A, Gabor, Andrew M, Noufi, Rommel, & Tennant, Andrew L. Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications. United States.
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Albin, David S, Carapella, Jeffrey J, Tuttle, John R, Contreras, Miguel A, Gabor, Andrew M, Noufi, Rommel, and Tennant, Andrew L. Sun . "Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications". United States. https://www.osti.gov/servlets/purl/870002.
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@article{osti_870002,
title = {Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications},
author = {Albin, David S and Carapella, Jeffrey J and Tuttle, John R and Contreras, Miguel A and Gabor, Andrew M and Noufi, Rommel and Tennant, Andrew L},
abstractNote = {A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1995},
month = {Sun Jan 01 00:00:00 EST 1995}
}
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Works referenced in this record:

A new self-stabilizing selenization process for the formation of CuInSe2 solar cells
conference, January 1992

  • Delahoy, A. E.; Faras, F.; Sizemore, A.
  • Photovoltaic advanced research and development project, AIP Conference Proceedings
  • https://doi.org/10.1063/1.42910

Fundamental thermodynamics and experiments in fabricating high efficiency CuInSe2 solar cells by selenization without the use of H2Se
conference, January 1992

Selenization of metallic Cu‐In thin films for CuInSe 2 solar cells
journal, December 1989

Large Grain Copper Indium Diselenide Films
journal, September 1984

Low Pressure Vapor Phase Selenization of Cu-in Films without H2Se
book, January 1991

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