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Title: High resolution energy-sensitive digital X-ray

Abstract

An apparatus and method for detecting an x-ray and for determining the depth of penetration of an x-ray into a semiconductor strip detector. In one embodiment, a semiconductor strip detector formed of semiconductor material is disposed in an edge-on orientation towards an x-ray source such that x-rays From the x-ray source are incident upon and substantially perpendicular to the front edge of the semiconductor strip detector. The semiconductor strip detector is formed of a plurality of segments. The segments are coupled together in a collinear arrangement such that the semiconductor strip detector has a length great enough such that substantially all of the x-rays incident on the front edge of the semiconductor strip detector interact with the semiconductor material which forms the semiconductor strip detector. A plurality of electrodes are connected to the semiconductor strip detect or such that each one of the of semiconductor strip detector segments has at least one of the of electrodes coupled thereto. A signal processor is also coupled to each one of the electrodes. The present detector detects an interaction within the semiconductor strip detector, between an x-ray and the semiconductor material, and also indicates the depth of penetration of the x-ray into themore » semiconductor strip detector at the time of the interaction.« less

Inventors:
 [1]
  1. (Berkeley, CA)
Issue Date:
Research Org.:
UNIVERSITY OF CALIFORNIA
OSTI Identifier:
869990
Patent Number(s):
5434417
Assignee:
Regents of University of California (Oakland, CA) LBNL
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
resolution; energy-sensitive; digital; x-ray; apparatus; method; detecting; determining; depth; penetration; semiconductor; strip; detector; embodiment; formed; material; disposed; edge-on; orientation; towards; source; x-rays; incident; substantially; perpendicular; front; edge; plurality; segments; coupled; collinear; arrangement; length; interact; forms; electrodes; connected; detect; thereto; signal; processor; detects; interaction; indicates; time; substantially perpendicular; signal processor; x-ray source; semiconductor material; detector detects; strip detector; semiconductor strip; x-rays incident; signal process; digital x-ray; rays incident; strip detect; /250/

Citation Formats

Nygren, David R. High resolution energy-sensitive digital X-ray. United States: N. p., 1995. Web.
Nygren, David R. High resolution energy-sensitive digital X-ray. United States.
Nygren, David R. Sun . "High resolution energy-sensitive digital X-ray". United States. https://www.osti.gov/servlets/purl/869990.
@article{osti_869990,
title = {High resolution energy-sensitive digital X-ray},
author = {Nygren, David R.},
abstractNote = {An apparatus and method for detecting an x-ray and for determining the depth of penetration of an x-ray into a semiconductor strip detector. In one embodiment, a semiconductor strip detector formed of semiconductor material is disposed in an edge-on orientation towards an x-ray source such that x-rays From the x-ray source are incident upon and substantially perpendicular to the front edge of the semiconductor strip detector. The semiconductor strip detector is formed of a plurality of segments. The segments are coupled together in a collinear arrangement such that the semiconductor strip detector has a length great enough such that substantially all of the x-rays incident on the front edge of the semiconductor strip detector interact with the semiconductor material which forms the semiconductor strip detector. A plurality of electrodes are connected to the semiconductor strip detect or such that each one of the of semiconductor strip detector segments has at least one of the of electrodes coupled thereto. A signal processor is also coupled to each one of the electrodes. The present detector detects an interaction within the semiconductor strip detector, between an x-ray and the semiconductor material, and also indicates the depth of penetration of the x-ray into the semiconductor strip detector at the time of the interaction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}

Patent:

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