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Title: Process for ion-assisted laser deposition of biaxially textured layer on substrate

Abstract

A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film.

Inventors:
 [1];  [2];  [3];  [4]
  1. Walnut Creek, CA
  2. Berkeley, CA
  3. Palo Alto, CA
  4. Oakland, CA
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
OSTI Identifier:
869972
Patent Number(s):
5432151
Assignee:
Regents of University of California (Oakland, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; ion-assisted; laser; deposition; biaxially; textured; layer; substrate; depositing; aligned; intermediate; non-single; crystal; disclosed; permits; subsequent; thereon; oriented; superconducting; film; comprises; ablation; material; capable; inhibiting; migration; materials; simultaneously; bombarding; beam; preferred; embodiment; carried; chamber; subsequently; deposit; aspect; optional; additional; bombardment; coated; biaxially oriented; conducting layer; subsequent deposition; superconducting film; axially aligned; biaxially textured; substrate material; preferred embodiment; single crystal; process comprises; intermediate layer; laser ablation; comprises depositing; material capable; coated substrate; laser deposition; textured layer; oriented superconducting; crystal substrate; conducting film; deposition thereon; superconducting layer; subsequently deposit; axially align; /505/427/

Citation Formats

Russo, Richard E, Reade, Ronald P, Garrison, Stephen M, and Berdahl, Paul. Process for ion-assisted laser deposition of biaxially textured layer on substrate. United States: N. p., 1995. Web.
Russo, Richard E, Reade, Ronald P, Garrison, Stephen M, & Berdahl, Paul. Process for ion-assisted laser deposition of biaxially textured layer on substrate. United States.
Russo, Richard E, Reade, Ronald P, Garrison, Stephen M, and Berdahl, Paul. Sun . "Process for ion-assisted laser deposition of biaxially textured layer on substrate". United States. https://www.osti.gov/servlets/purl/869972.
@article{osti_869972,
title = {Process for ion-assisted laser deposition of biaxially textured layer on substrate},
author = {Russo, Richard E and Reade, Ronald P and Garrison, Stephen M and Berdahl, Paul},
abstractNote = {A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}

Works referenced in this record:

Critical current density enhancement in YBa 2 Cu 3 O 6.8 films on buffered metallic substrates
journal, March 1991


Metal buffer layers and Y‐Ba‐Cu‐O thin films on Pt and stainless steel using pulsed laser deposition
journal, August 1990


High critical current densities in YBa 2 Cu 3 O 7− x films on polycrystalline zirconia
journal, September 1990


High critical currents in strained epitaxial YBa 2 Cu 3 O 7−δ on Si
journal, September 1990


Observation of two in‐plane epitaxial states in YBa 2 Cu 3 O 7−δ films on yttria‐stabilized ZrO 2
journal, May 1991


In‐plane aligned YBa 2 Cu 3 O 7− x thin films deposited on polycrystalline metallic substrates
journal, February 1992


Synthesis of superconducting YBa 2 Cu 3 O 7−δ thin films on nickel‐based superalloy using in situ pulsed laser deposition
journal, December 1990


In-plane texturing control of Y-Ba-Cu-O thin films on polycrystalline substrates by ion-beam-modified intermediate buffer layers
journal, March 1993


Theory of thin‐film orientation by ion bombardment during deposition
journal, December 1986


Angular magnetoresistance provides texture information on high-Tc conductors
journal, May 1992


Superconducting transport properties of grain boundaries in YBa 2 Cu 3 O 7 bicrystals
journal, March 1990