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Title: Process for ion-assisted laser deposition of biaxially textured layer on substrate

A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film.
Inventors:
 [1];  [2];  [3];  [4]
  1. (Walnut Creek, CA)
  2. (Berkeley, CA)
  3. (Palo Alto, CA)
  4. (Oakland, CA)
Issue Date:
OSTI Identifier:
869972
Assignee:
Regents of University of California (Oakland, CA) LBNL
Patent Number(s):
US 5432151
Contract Number:
AC03-76SF00098
Research Org:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
Country of Publication:
United States
Language:
English
Subject:
process; ion-assisted; laser; deposition; biaxially; textured; layer; substrate; depositing; aligned; intermediate; non-single; crystal; disclosed; permits; subsequent; thereon; oriented; superconducting; film; comprises; ablation; material; capable; inhibiting; migration; materials; simultaneously; bombarding; beam; preferred; embodiment; carried; chamber; subsequently; deposit; aspect; optional; additional; bombardment; coated; biaxially oriented; conducting layer; subsequent deposition; superconducting film; axially aligned; biaxially textured; substrate material; preferred embodiment; single crystal; process comprises; intermediate layer; laser ablation; comprises depositing; material capable; coated substrate; laser deposition; textured layer; oriented superconducting; crystal substrate; conducting film; deposition thereon; superconducting layer; subsequently deposit; axially align; /505/427/