Visible light emitting vertical cavity surface emitting lasers
Abstract
A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of .lambda./2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In.sub.z (Al.sub.y Ga.sub.1-y).sub.1-z P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m .lambda./2n.sub.eff where m is an integer and n.sub.eff is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of .lambda./n, typically within the green to red portion of the visible spectrum.
- Inventors:
-
- Boulder, CO
- Albuquerque, NM
- (Albuquerque, NM)
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 869954
- Patent Number(s):
- 5428634
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- visible; light; emitting; vertical; cavity; surface; lasers; laser; emits; radiation; built; substrate; mirrors; mirror; top; sets; distributed; bragg; reflector; dielectrics; materials; affect; resistivity; semiconductors; structure; comprises; plurality; thickness; lambda; 2n; index; refraction; adjacent; spacers; optically; active; bulk; quantum; layer; following; material; systems; z; 1-y; 1-z; inalgaas; algaas; ingaas; algap; gap; region; length; equal; eff; integer; effective; spacer; transmissive; wavelength; typically; green; portion; spectrum; cavity surface; bragg reflector; laser cavity; active region; visible light; active layer; light emitting; optically active; vertical cavity; surface emitting; visible radiation; emitting laser; distributed bragg; spacer layer; emitting lasers; material systems; /372/
Citation Formats
Bryan, Robert P, Olbright, Gregory R, Lott, James A, and Schneider, Jr., Richard P. Visible light emitting vertical cavity surface emitting lasers. United States: N. p., 1995.
Web.
Bryan, Robert P, Olbright, Gregory R, Lott, James A, & Schneider, Jr., Richard P. Visible light emitting vertical cavity surface emitting lasers. United States.
Bryan, Robert P, Olbright, Gregory R, Lott, James A, and Schneider, Jr., Richard P. Sun .
"Visible light emitting vertical cavity surface emitting lasers". United States. https://www.osti.gov/servlets/purl/869954.
@article{osti_869954,
title = {Visible light emitting vertical cavity surface emitting lasers},
author = {Bryan, Robert P and Olbright, Gregory R and Lott, James A and Schneider, Jr., Richard P.},
abstractNote = {A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of .lambda./2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In.sub.z (Al.sub.y Ga.sub.1-y).sub.1-z P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m .lambda./2n.sub.eff where m is an integer and n.sub.eff is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of .lambda./n, typically within the green to red portion of the visible spectrum.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}
Works referenced in this record:
Visible (657 nm) InGaP/InAlGaP strained quantum well vertical‐cavity surface‐emitting laser
journal, April 1992
- Schneider, R. P.; Bryan, R. P.; Lott, J. A.
- Applied Physics Letters, Vol. 60, Issue 15
Effects of strained‐layer structures on the threshold current density of AlGaInP/GaInP visible lasers
journal, March 1991
- Hashimoto, Jun‐ichi; Katsuyama, Tsukuru; Shinkai, Jiro
- Applied Physics Letters, Vol. 58, Issue 9
Linewidth, tunability, and VHF-millimeter wave frequency synthesis of vertical-cavity GaAs quantum-well surface-emitting laser diode arrays
journal, September 1991
- Olbright, G. R.; Bryan, R. P.; Fu, W. S.
- IEEE Photonics Technology Letters, Vol. 3, Issue 9
High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers
journal, January 1990
- Lee, Y. H.; Tell, B.; Brown-Goebeler, K.
- Electronics Letters, Vol. 26, Issue 16
Evidence for the existence of an ordered state in Ga 0.5 In 0.5 P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
journal, March 1987
- Gomyo, A.; Suzuki, T.; Kobayashi, K.
- Applied Physics Letters, Vol. 50, Issue 11
Low series resistance vertical‐cavity front‐surface‐emitting laser diode
journal, May 1990
- Yoo, Hoi‐Jun; Hayes, J. R.; Andreadakis, N.
- Applied Physics Letters, Vol. 56, Issue 20
Cascadable laser logic devices: discrete integration of phototransistors with surface-emitting laser diodes
journal, January 1991
- Olbright, G. R.; Bryan, R. P.; Lear, K.
- Electronics Letters, Vol. 27, Issue 3
AlGaInP visible laser diodes grown on misoriented substrates
journal, June 1991
- Hamada, H.; Shono, M.; Honda, S.
- IEEE Journal of Quantum Electronics, Vol. 27, Issue 6
Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers
journal, February 1991
- Lee, Y. H.; Tell, B.; Brown-Goebeler, K. F.
- IEEE Photonics Technology Letters, Vol. 3, Issue 2
InGaAs vertical-cavity surface-emitting lasers
journal, June 1991
- Geels, R. S.; Corzine, S. W.; Coldren, L. A.
- IEEE Journal of Quantum Electronics, Vol. 27, Issue 6
Microlasers
journal, November 1991
- Jewell, Jack L.; Harbison, James P.; Scherer, Axel
- Scientific American, Vol. 265, Issue 5
Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization
journal, June 1991
- Jewell, J. L.; Harbison, J. P.; Scherer, A.
- IEEE Journal of Quantum Electronics, Vol. 27, Issue 6
Zn doping characteristics for InGaAlP grown by low‐pressure metalorganic chemical vapor deposition
journal, November 1988
- Nishikawa, Y.; Tsuburai, Y.; Nozaki, C.
- Applied Physics Letters, Vol. 53, Issue 22
Heterojunction band offsets and effective masses in III-V quaternary alloys
journal, January 1991
- Krijn, M. P. C. M.
- Semiconductor Science and Technology, Vol. 6, Issue 1
Visible, room‐temperature, surface‐emitting laser using an epitaxial Fabry–Perot resonator with AlGaAs/AlAs quarter‐wave high reflectors and AlGaAs/GaAs multiple quantum wells
journal, May 1987
- Gourley, P. L.; Drummond, T. J.
- Applied Physics Letters, Vol. 50, Issue 18