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Title: Visible light emitting vertical cavity surface emitting lasers

Abstract

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of .lambda./2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In.sub.z (Al.sub.y Ga.sub.1-y).sub.1-z P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m .lambda./2n.sub.eff where m is an integer and n.sub.eff is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of .lambda./n, typically within the green to red portion of the visible spectrum.

Inventors:
 [1];  [1];  [2];  [3]
  1. Boulder, CO
  2. Albuquerque, NM
  3. (Albuquerque, NM)
Issue Date:
Research Org.:
AT&T
OSTI Identifier:
869954
Patent Number(s):
5428634
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
visible; light; emitting; vertical; cavity; surface; lasers; laser; emits; radiation; built; substrate; mirrors; mirror; top; sets; distributed; bragg; reflector; dielectrics; materials; affect; resistivity; semiconductors; structure; comprises; plurality; thickness; lambda; 2n; index; refraction; adjacent; spacers; optically; active; bulk; quantum; layer; following; material; systems; z; 1-y; 1-z; inalgaas; algaas; ingaas; algap; gap; region; length; equal; eff; integer; effective; spacer; transmissive; wavelength; typically; green; portion; spectrum; cavity surface; bragg reflector; laser cavity; active region; visible light; active layer; light emitting; optically active; vertical cavity; surface emitting; visible radiation; emitting laser; distributed bragg; spacer layer; emitting lasers; material systems; /372/

Citation Formats

Bryan, Robert P, Olbright, Gregory R, Lott, James A, and Schneider, Jr., Richard P. Visible light emitting vertical cavity surface emitting lasers. United States: N. p., 1995. Web.
Bryan, Robert P, Olbright, Gregory R, Lott, James A, & Schneider, Jr., Richard P. Visible light emitting vertical cavity surface emitting lasers. United States.
Bryan, Robert P, Olbright, Gregory R, Lott, James A, and Schneider, Jr., Richard P. Sun . "Visible light emitting vertical cavity surface emitting lasers". United States. https://www.osti.gov/servlets/purl/869954.
@article{osti_869954,
title = {Visible light emitting vertical cavity surface emitting lasers},
author = {Bryan, Robert P and Olbright, Gregory R and Lott, James A and Schneider, Jr., Richard P.},
abstractNote = {A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of .lambda./2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In.sub.z (Al.sub.y Ga.sub.1-y).sub.1-z P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m .lambda./2n.sub.eff where m is an integer and n.sub.eff is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of .lambda./n, typically within the green to red portion of the visible spectrum.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}

Works referenced in this record:

Visible (657 nm) InGaP/InAlGaP strained quantum well vertical‐cavity surface‐emitting laser
journal, April 1992


Effects of strained‐layer structures on the threshold current density of AlGaInP/GaInP visible lasers
journal, March 1991


Linewidth, tunability, and VHF-millimeter wave frequency synthesis of vertical-cavity GaAs quantum-well surface-emitting laser diode arrays
journal, September 1991


High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers
journal, January 1990


Low series resistance vertical‐cavity front‐surface‐emitting laser diode
journal, May 1990


Cascadable laser logic devices: discrete integration of phototransistors with surface-emitting laser diodes
journal, January 1991


AlGaInP visible laser diodes grown on misoriented substrates
journal, June 1991


Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers
journal, February 1991


InGaAs vertical-cavity surface-emitting lasers
journal, June 1991


Microlasers
journal, November 1991


Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization
journal, June 1991


Zn doping characteristics for InGaAlP grown by low‐pressure metalorganic chemical vapor deposition
journal, November 1988


Heterojunction band offsets and effective masses in III-V quaternary alloys
journal, January 1991