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Title: Pulsed energy synthesis and doping of silicon carbide

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.
Inventors:
 [1];  [2];  [3];  [4]
  1. (San Rafael, CA)
  2. (Pleasanton, CA)
  3. (Brentwood, CA)
  4. (Beaverton, OR)
Issue Date:
OSTI Identifier:
869934
Assignee:
Regents of University of California (Oakland, CA) LLNL
Patent Number(s):
US 5425860
Contract Number:
W-7405-ENG-48
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Country of Publication:
United States
Language:
English
Subject:
pulsed; energy; synthesis; doping; silicon; carbide; method; producing; beta; films; co-depositing; amorphous; carbon; substrate; whereafter; irradiated; exposure; source; excimer; laser; formation; beta-sic; compound; doped; produced; introducing; dopant; gases; irradiation; single; layers; thickness; 5-1; micron; thicker; multiple; processing; steps; electron; transport; properties; wide; temperature; range; 27; degree; -730; alpha; application; semiconductors; including; hetero-junction; bipolar; transistors; power; devices; bandgap; solar; arrays; ultra-hard; coatings; light; emitting; diodes; sensors; etc; pulsed energy; emitting diodes; emitting diode; single layer; temperature range; amorphous silicon; silicon carbide; energy source; processing steps; light emitting; electron transport; beta silicon; excimer laser; wide temperature; transport properties; processing step; power devices; producing beta; hard coatings; hard coating; bipolar transistors; bipolar transistor; solar array; introducing dopant; temperature semiconductor; temperature semiconductors; dopant gas; /204/136/