Transistors using crystalline silicon devices on glass

McCarthy, Anthony M

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Title: Transistors using crystalline silicon devices on glass

Abstract

A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

Inventors:

McCarthy, Anthony M ^[1]

Menlo Park, CA

Issue Date:: 1995-01-01

Research Org.:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

OSTI Identifier:: 869879

Patent Number(s):: 5414276

Assignee:: Regents of University of California ()

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/2007 - {Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
H01L21/30604 - {Chemical etching}
H01L21/76264 - {SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands}
H01L29/42392 - {fully surrounding the channel, e.g. gate-all-around}
H01L29/66265 - {Thin film bipolar transistors
H01L29/66772 - {Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
H01L29/7317 - {Bipolar thin film transistors}
H01L29/78633 - {with a light shield}
H01L29/78645 - {with multiple gate}
H01L29/78648 - {arranged on opposing sides of the channel}
H01L29/78654 - {Monocrystalline silicon transistors}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/97 - Specified etch stop material

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: transistors; crystalline; silicon; devices; glass; method; fabricating; single-crystal; overcomes; potential; damage; caused; device; voltage; bonding; employs; metal; layer; incorporated; transistor; accomplished; wafer; substrate; performed; current; pass; fabricated; removal; deposited; form; electrical; contact; add; functionality; single; gate-all-around; formed; silicon device; metal layer; electrical contact; silicon substrate; glass substrate; silicon wafer; crystalline silicon; silicon devices; crystal silicon; single-crystal silicon; method overcomes; fabricating transistors; voltage bonding; form electrical; potential damage; current pass; /257/438/

Citation Formats


                    McCarthy, Anthony M. Transistors using crystalline silicon devices on glass.  United States: N. p., 1995. 
        Web.

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                    McCarthy, Anthony M. Transistors using crystalline silicon devices on glass.  United States.

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                    McCarthy, Anthony M. Sun .  
        "Transistors using crystalline silicon devices on glass".  United States.  https://www.osti.gov/servlets/purl/869879.

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@article{osti_869879,

  title        = {Transistors using crystalline silicon devices on glass},

  author       = {McCarthy, Anthony M},

  abstractNote = {A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1995},

  month        = {1}

}

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Works referenced in this record:

A technology for high-performance single-crystal silicon-on-insulator transistors
journal, April 1987

Spangler, L. J.; Wise, K. D.
IEEE Electron Device Letters, Vol. 8, Issue 4
https://doi.org/10.1109/EDL.1987.26579

Low-temperature fabrication of p/sup +/-n diodes with 300-AA junction depth
journal, July 1992

Weiner, K. H.; Carey, P. G.; McCarthy, A. M.
IEEE Electron Device Letters, Vol. 13, Issue 7
https://doi.org/10.1109/55.192758

Laser crystallization of Si films on glass
journal, March 1982

Lemons, R. A.; Bosch, M. A.; Dayem, A. H.
Applied Physics Letters, Vol. 40, Issue 6
https://doi.org/10.1063/1.93137

Nanosecond Thermal Processing for Ultra-High-Speed Device Technology
journal, January 1989

Sigmon, Thomas W.; McCarthy, Anthony M.; Weiner, CA Kurt H.
MRS Proceedings, Vol. 158
https://doi.org/10.1557/PROC-158-241

Silicon-on-insulator (SOI) by bonding and ETCH-back
conference, January 1985

Lasky, J. B.; Stiffler, S. R.; White, F. R.
1985 International Electron Devices Meeting
https://doi.org/10.1109/IEDM.1985.191067

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Similar Records

Title: Transistors using crystalline silicon devices on glass

Abstract

Citation Formats

A technology for high-performance single-crystal silicon-on-insulator transistors journal, April 1987

Low-temperature fabrication of p/sup +/-n diodes with 300-AA junction depth journal, July 1992

Laser crystallization of Si films on glass journal, March 1982

Nanosecond Thermal Processing for Ultra-High-Speed Device Technology journal, January 1989

Silicon-on-insulator (SOI) by bonding and ETCH-back conference, January 1985

A technology for high-performance single-crystal silicon-on-insulator transistors
journal, April 1987

Low-temperature fabrication of p/sup +/-n diodes with 300-AA junction depth
journal, July 1992

Laser crystallization of Si films on glass
journal, March 1982

Nanosecond Thermal Processing for Ultra-High-Speed Device Technology
journal, January 1989

Silicon-on-insulator (SOI) by bonding and ETCH-back
conference, January 1985