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Title: Multijunction photovoltaic device and method of manufacture

A multijunction photovoltaic device includes first, second, and third amorphous silicon p-i-n photovoltaic cells in a stacked arrangement. The intrinsic layers of the second and third cells are formed of a-SiGe alloys with differing ratios of Ge such that the bandgap of the intrinsic layers respectively decrease from the first uppermost cell to the third lowermost cell. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one of the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers.
Inventors:
 [1];  [2];  [3]
  1. (Jamison, PA)
  2. (Boulder, CO)
  3. (Longhorne, PA)
Issue Date:
OSTI Identifier:
869812
Assignee:
Amoco Corporation (Naperville, IL) [*] Notice: portion of term of this patent subsequent to September 21, 2010 has been disclaimed. OSTI
Patent Number(s):
US 5403404
Application Number:
08/077,769
Contract Number:
ZM-1-19033-1
Country of Publication:
United States
Language:
English
Subject:
multijunction; photovoltaic; device; method; manufacture; third; amorphous; silicon; p-i-n; cells; stacked; arrangement; intrinsic; layers; formed; a-sige; alloys; differing; ratios; bandgap; respectively; decrease; uppermost; cell; lowermost; interface; layer; composed; doped; compound; disposed; respective; n-; p-type; adjacent; forms; ohmic; contact; conductivity; type; tunnel; junction; silicon compound; multijunction photovoltaic; intrinsic layer; tunnel junction; photovoltaic cells; amorphous silicon; photovoltaic device; ohmic contact; photovoltaic cell; adjacent cell; doped silicon; conductivity type; adjacent layers; stacked arrangement; interface layer; cell layer; layer forms; silicon p-i-n; /136/

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