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Title: Multijunction photovoltaic device and method of manufacture

Abstract

A multijunction photovoltaic device includes first, second, and third amorphous silicon p-i-n photovoltaic cells in a stacked arrangement. The intrinsic layers of the second and third cells are formed of a-SiGe alloys with differing ratios of Ge such that the bandgap of the intrinsic layers respectively decrease from the first uppermost cell to the third lowermost cell. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one of the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers.

Inventors:
 [1];  [2];  [3]
  1. Jamison, PA
  2. Boulder, CO
  3. Longhorne, PA
Issue Date:
OSTI Identifier:
869812
Patent Number(s):
5403404
Application Number:
08/077,769
Assignee:
Amoco Corporation (Naperville, IL) [*] Notice: portion of term of this patent subsequent to September 21, 2010 has been disclaimed.
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
ZM-1-19033-1
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
multijunction; photovoltaic; device; method; manufacture; third; amorphous; silicon; p-i-n; cells; stacked; arrangement; intrinsic; layers; formed; a-sige; alloys; differing; ratios; bandgap; respectively; decrease; uppermost; cell; lowermost; interface; layer; composed; doped; compound; disposed; respective; n-; p-type; adjacent; forms; ohmic; contact; conductivity; type; tunnel; junction; silicon compound; multijunction photovoltaic; intrinsic layer; tunnel junction; photovoltaic cells; amorphous silicon; photovoltaic device; ohmic contact; photovoltaic cell; adjacent cell; doped silicon; conductivity type; adjacent layers; stacked arrangement; interface layer; cell layer; layer forms; silicon p-i-n; /136/

Citation Formats

Arya, Rejeewa R, Catalano, Anthony W, and Bennett, Murray. Multijunction photovoltaic device and method of manufacture. United States: N. p., 1995. Web.
Arya, Rejeewa R, Catalano, Anthony W, & Bennett, Murray. Multijunction photovoltaic device and method of manufacture. United States.
Arya, Rejeewa R, Catalano, Anthony W, and Bennett, Murray. Sun . "Multijunction photovoltaic device and method of manufacture". United States. https://www.osti.gov/servlets/purl/869812.
@article{osti_869812,
title = {Multijunction photovoltaic device and method of manufacture},
author = {Arya, Rejeewa R and Catalano, Anthony W and Bennett, Murray},
abstractNote = {A multijunction photovoltaic device includes first, second, and third amorphous silicon p-i-n photovoltaic cells in a stacked arrangement. The intrinsic layers of the second and third cells are formed of a-SiGe alloys with differing ratios of Ge such that the bandgap of the intrinsic layers respectively decrease from the first uppermost cell to the third lowermost cell. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one of the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}

Works referenced in this record:

Improving tunneling junction in amorphous silicon tandem solar cells
journal, May 1990


Stacked solar cells of amorphous silicon
journal, January 1980


Evaluation of Multijunction Structures Using Amorphous Si-Ge Alloys
book, January 1979


A stable 10% solar cell with a-Si/a-Si double junction structure
conference, January 1990