Method of forming crystalline silicon devices on glass
Abstract
A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.
- Inventors:
-
- Menlo Park, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 869793
- Patent Number(s):
- 5399231
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G02 - OPTICS G02F - DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; forming; crystalline; silicon; devices; glass; fabricating; single-crystal; microelectronic; components; substrate; transferring; achieved; utilizing; conventional; processing; techniques; electronic; circuits; bulk; surface; prepared; epitaxial; layers; prior; bonded; removed; leaving; intact; subsequent; standard; completes; device; circuit; manufacturing; useful; applications; requiring; transparent; insulating; particularly; display; sensors; actuators; optoelectronics; radiation; hard; electronics; temperature; removed leaving; silicon device; applications requiring; electronic circuit; silicon substrate; substrate surface; glass substrate; crystalline silicon; silicon devices; bulk silicon; epitaxial layer; electronic components; processing techniques; crystal silicon; radiation hard; standard processing; utilizing conventional; single-crystal silicon; silicon surface; insulating substrate; electronic circuits; conventional processing; microelectronic component; microelectronic components; epitaxial layers; conventional process; silicon microelectronic; temperature electronic; processing technique; conventional silicon; /438/117/148/
Citation Formats
McCarthy, Anthony M. Method of forming crystalline silicon devices on glass. United States: N. p., 1995.
Web.
McCarthy, Anthony M. Method of forming crystalline silicon devices on glass. United States.
McCarthy, Anthony M. Sun .
"Method of forming crystalline silicon devices on glass". United States. https://www.osti.gov/servlets/purl/869793.
@article{osti_869793,
title = {Method of forming crystalline silicon devices on glass},
author = {McCarthy, Anthony M},
abstractNote = {A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}
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