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Title: Method of forming crystalline silicon devices on glass

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.
Inventors:
 [1]
  1. (Menlo Park, CA)
Issue Date:
OSTI Identifier:
869793
Assignee:
Regents of University of California (Oakland, CA) LLNL
Patent Number(s):
US 5399231
Contract Number:
W-7405-ENG-48
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Country of Publication:
United States
Language:
English
Subject:
method; forming; crystalline; silicon; devices; glass; fabricating; single-crystal; microelectronic; components; substrate; transferring; achieved; utilizing; conventional; processing; techniques; electronic; circuits; bulk; surface; prepared; epitaxial; layers; prior; bonded; removed; leaving; intact; subsequent; standard; completes; device; circuit; manufacturing; useful; applications; requiring; transparent; insulating; particularly; display; sensors; actuators; optoelectronics; radiation; hard; electronics; temperature; removed leaving; silicon device; applications requiring; electronic circuit; silicon substrate; substrate surface; glass substrate; crystalline silicon; silicon devices; bulk silicon; epitaxial layer; electronic components; processing techniques; crystal silicon; radiation hard; standard processing; utilizing conventional; single-crystal silicon; silicon surface; insulating substrate; electronic circuits; conventional processing; microelectronic component; microelectronic components; epitaxial layers; conventional process; silicon microelectronic; temperature electronic; processing technique; conventional silicon; /438/117/148/

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