Method for accurate growth of verticalcavity surfaceemitting lasers
Abstract
We report a method for accurate growth of verticalcavity surfaceemitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with FabryPerot cavity resonance wavelengths controlled to within 0.5%.
 Inventors:

 Albuquerque, NM
 Issue Date:
 Research Org.:
 AT & T CORP
 OSTI Identifier:
 869790
 Patent Number(s):
 5397739
 Assignee:
 Sandia Corporation (Albuquerque, NM)
 DOE Contract Number:
 AC0476DP00789
 Resource Type:
 Patent
 Country of Publication:
 United States
 Language:
 English
 Subject:
 method; accurate; growth; verticalcavity; surfaceemitting; lasers; report; vcsels; single; reflectivity; spectrum; measurement; determine; structure; partially; completed; vcsel; critical; information; extracted; rates; allows; imprecisions; parameters; compensated; remaining; dimensions; routinely; grow; lasing; fabryperot; cavity; resonance; wavelengths; controlled; cavity surface; surfaceemitting laser; growth rate; verticalcavity surfaceemitting; partially completed; surfaceemitting lasers; critical dimension; growth rates; emitting laser; fabryperot cavity; cavity resonance; resonance wavelengths; resonance wavelength; emitting lasers; accurate growth; critical dimensions; /438/117/
Citation Formats
Chalmers, Scott A, Killeen, Kevin P, and Lear, Kevin L. Method for accurate growth of verticalcavity surfaceemitting lasers. United States: N. p., 1995.
Web.
Chalmers, Scott A, Killeen, Kevin P, & Lear, Kevin L. Method for accurate growth of verticalcavity surfaceemitting lasers. United States.
Chalmers, Scott A, Killeen, Kevin P, and Lear, Kevin L. Sun .
"Method for accurate growth of verticalcavity surfaceemitting lasers". United States. https://www.osti.gov/servlets/purl/869790.
@article{osti_869790,
title = {Method for accurate growth of verticalcavity surfaceemitting lasers},
author = {Chalmers, Scott A and Killeen, Kevin P and Lear, Kevin L},
abstractNote = {We report a method for accurate growth of verticalcavity surfaceemitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with FabryPerot cavity resonance wavelengths controlled to within 0.5%.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}
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