Method for accurate growth of vertical-cavity surface-emitting lasers

Chalmers, Scott A; Killeen, Kevin P; Lear, Kevin L

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Title: Method for accurate growth of vertical-cavity surface-emitting lasers

Abstract

We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%.

Inventors:

Chalmers, Scott A ^[1]; Killeen, Kevin P ^[1]; Lear, Kevin L ^[1]

Albuquerque, NM

Issue Date:: 1995-01-01

Research Org.:: AT&T

OSTI Identifier:: 869790

Patent Number(s):: 5397739

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B24 - GRINDING B24B - MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B24 - GRINDING B24B - MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
B24B37/013 - Devices or means for detecting lapping completion

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L22/26 - {Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S5/0042 - {On wafer testing, e.g. lasers are tested before separating wafer into chips}
H01S5/18358 - {containing spacer layers to adjust the phase of the light wave in the cavity}
H01S5/18361 - {Structure of the reflectors, e.g. hybrid mirrors}

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DOE Contract Number:: AC04-76DP00789

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: method; accurate; growth; vertical-cavity; surface-emitting; lasers; report; vcsels; single; reflectivity; spectrum; measurement; determine; structure; partially; completed; vcsel; critical; information; extracted; rates; allows; imprecisions; parameters; compensated; remaining; dimensions; routinely; grow; lasing; fabry-perot; cavity; resonance; wavelengths; controlled; cavity surface; surface-emitting laser; growth rate; vertical-cavity surface-emitting; partially completed; surface-emitting lasers; critical dimension; growth rates; emitting laser; fabry-perot cavity; cavity resonance; resonance wavelengths; resonance wavelength; emitting lasers; accurate growth; critical dimensions; /438/117/

Citation Formats


                    Chalmers, Scott A, Killeen, Kevin P, and Lear, Kevin L. Method for accurate growth of vertical-cavity surface-emitting lasers.  United States: N. p., 1995. 
        Web.

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                    Chalmers, Scott A, Killeen, Kevin P, & Lear, Kevin L. Method for accurate growth of vertical-cavity surface-emitting lasers.  United States.

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                    Chalmers, Scott A, Killeen, Kevin P, and Lear, Kevin L. Sun .  
        "Method for accurate growth of vertical-cavity surface-emitting lasers".  United States.  https://www.osti.gov/servlets/purl/869790.

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@article{osti_869790,

  title        = {Method for accurate growth of vertical-cavity surface-emitting lasers},

  author       = {Chalmers, Scott A and Killeen, Kevin P and Lear, Kevin L},

  abstractNote = {We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1995},

  month        = {1}

}

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Works referenced in this record:

Real‐time optical diagnostics for epitaxial growth
journal, May 1991

Aspnes, D. E.; Quinn, W. E.; Gregory, S.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 9, Issue 3
https://doi.org/10.1116/1.577332

Molecular beam epitaxy growth of vertical cavity optical devices with in situ corrections
journal, September 1992

Bacher, K.; Pezeshki, B.; Lord, S. M.
Applied Physics Letters, Vol. 61, Issue 12
https://doi.org/10.1063/1.107546

Diffuse optical reflectivity measurements on GaAs during molecular‐beam epitaxy processing
journal, July 1992

Lavoie, C.; Johnson, S. R.; Mackenzie, J. A.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 10, Issue 4
https://doi.org/10.1116/1.577880