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Title: Method for accurate growth of vertical-cavity surface-emitting lasers

We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%.
Inventors:
 [1];  [1];  [1]
  1. (Albuquerque, NM)
Issue Date:
OSTI Identifier:
869790
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
Patent Number(s):
US 5397739
Contract Number:
AC04-76DP00789
Research Org:
AT & T CORP
Country of Publication:
United States
Language:
English
Subject:
method; accurate; growth; vertical-cavity; surface-emitting; lasers; report; vcsels; single; reflectivity; spectrum; measurement; determine; structure; partially; completed; vcsel; critical; information; extracted; rates; allows; imprecisions; parameters; compensated; remaining; dimensions; routinely; grow; lasing; fabry-perot; cavity; resonance; wavelengths; controlled; cavity surface; surface-emitting laser; growth rate; vertical-cavity surface-emitting; partially completed; surface-emitting lasers; critical dimension; growth rates; emitting laser; fabry-perot cavity; cavity resonance; resonance wavelengths; resonance wavelength; emitting lasers; accurate growth; critical dimensions; /438/117/

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