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Title: Method for accurate growth of vertical-cavity surface-emitting lasers

We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%.
 [1];  [1];  [1]
  1. (Albuquerque, NM)
Issue Date:
OSTI Identifier:
Sandia Corporation (Albuquerque, NM) SNL
Patent Number(s):
US 5397739
Contract Number:
Research Org:
Country of Publication:
United States
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