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Title: Deposition of device quality low H content, amorphous silicon films

A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, 2000.degree. C., tungsten (W) filament in the proximity of a high temperature, 400.degree. C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content.
Inventors:
 [1];  [2];  [3]
  1. (Golden, CO)
  2. (Evergreen, CO)
  3. (Louisville, CO)
Issue Date:
OSTI Identifier:
869789
Assignee:
United States of America as represented by United States (Washington, DC) CHO
Patent Number(s):
US 5397737
Contract Number:
AC02-83CH10093
Research Org:
MIDWEST RESEARCH INSTITUTE
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
deposition; device; quality; content; amorphous; silicon; films; hydrogen; hydrogenated; a-si; film; deposited; passing; stream; silane; gas; sih; temperature; 2000; degree; tungsten; filament; proximity; 400; substrate; pressure; mtorr; chamber; decomposed; atomic; collides; preferably; 20-30; times; hot; produced; percent; electrical; chemical; structural; properties; despite; lowered; silicon films; hydrogen content; atomic hydrogen; silicon film; device quality; atomic percent; deposition chamber; amorphous silicon; hydrogenated amorphous; silane gas; structural properties; /438/136/427/