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Title: Method for forming silicon on a glass substrate

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.
Inventors:
 [1]
  1. (Menlo Park, CA)
Issue Date:
OSTI Identifier:
869770
Assignee:
Regents of University of California (Oakland, CA) LLNL
Patent Number(s):
US 5395481
Contract Number:
W-7405-ENG-48
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Country of Publication:
United States
Language:
English
Subject:
method; forming; silicon; glass; substrate; single-crystal; microelectronics; fabricated; substrates; unconventionally; temperatures; achieved; fabricating; film; subsequently; doped; components; wavelength; excimer; laser; doping; procedure; conventional; patterning; techniques; introducing; heavily; boron; etch; stop; layer; wafer; permits; control; removal; process; additionally; dramatically; reducing; remaining; surface; roughness; films; etching; fabrication; insulator; wafers; scanning; causing; melting; whereby; tension; melt; causes; smoothing; recrystallization; applications; requiring; transparent; insulating; display; manufacturing; sensors; actuators; optoelectronics; radiation; hard; temperature; electronics; removal process; etch stop; top layer; glass substrate; silicon wafer; surface tension; surface roughness; excimer laser; crystal silicon; radiation hard; stop layer; method additionally; single-crystal silicon; insulating substrate; laser doping; glass substrates; forming silicon; silicon microelectronic; temperature electronic; /438/117/148/