Method for forming silicon on a glass substrate
Abstract
A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.
- Inventors:
-
- Menlo Park, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 869770
- Patent Number(s):
- 5395481
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; forming; silicon; glass; substrate; single-crystal; microelectronics; fabricated; substrates; unconventionally; temperatures; achieved; fabricating; film; subsequently; doped; components; wavelength; excimer; laser; doping; procedure; conventional; patterning; techniques; introducing; heavily; boron; etch; stop; layer; wafer; permits; control; removal; process; additionally; dramatically; reducing; remaining; surface; roughness; films; etching; fabrication; insulator; wafers; scanning; causing; melting; whereby; tension; melt; causes; smoothing; recrystallization; applications; requiring; transparent; insulating; display; manufacturing; sensors; actuators; optoelectronics; radiation; hard; temperature; electronics; removal process; etch stop; top layer; glass substrate; silicon wafer; surface tension; surface roughness; excimer laser; crystal silicon; radiation hard; stop layer; method additionally; single-crystal silicon; insulating substrate; laser doping; glass substrates; forming silicon; silicon microelectronic; temperature electronic; /438/117/148/
Citation Formats
McCarthy, Anthony M. Method for forming silicon on a glass substrate. United States: N. p., 1995.
Web.
McCarthy, Anthony M. Method for forming silicon on a glass substrate. United States.
McCarthy, Anthony M. Sun .
"Method for forming silicon on a glass substrate". United States. https://www.osti.gov/servlets/purl/869770.
@article{osti_869770,
title = {Method for forming silicon on a glass substrate},
author = {McCarthy, Anthony M},
abstractNote = {A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}
Works referenced in this record:
A technology for high-performance single-crystal silicon-on-insulator transistors
journal, April 1987
- Spangler, L. J.; Wise, K. D.
- IEEE Electron Device Letters, Vol. 8, Issue 4
Low-temperature fabrication of p/sup +/-n diodes with 300-AA junction depth
journal, July 1992
- Weiner, K. H.; Carey, P. G.; McCarthy, A. M.
- IEEE Electron Device Letters, Vol. 13, Issue 7
Laser crystallization of Si films on glass
journal, March 1982
- Lemons, R. A.; Bosch, M. A.; Dayem, A. H.
- Applied Physics Letters, Vol. 40, Issue 6
Nanosecond Thermal Processing for Ultra-High-Speed Device Technology
journal, January 1989
- Sigmon, Thomas W.; McCarthy, Anthony M.; Weiner, CA Kurt H.
- MRS Proceedings, Vol. 158
Silicon-on-insulator (SOI) by bonding and ETCH-back
conference, January 1985
- Lasky, J. B.; Stiffler, S. R.; White, F. R.
- 1985 International Electron Devices Meeting
Novel LSI/SOI wafer fabrication using device layer transfer technique
conference, January 1985
- Hamaguchi, T.; Endo, E.; Kimura, M.
- 1985 International Electron Devices Meeting