Global to push GA events into
skip to main content

Title: Method of deposition by molecular beam epitaxy

A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.
Inventors:
 [1];  [1];  [1]
  1. (Albuquerque, NM)
Issue Date:
OSTI Identifier:
869693
Assignee:
Sandia National Laboratories (Albuquerque, NM) SNL
Patent Number(s):
US 5379719
Contract Number:
AC04-76DP00789
Research Org:
AT & T CORP
Country of Publication:
United States
Language:
English
Subject:
method; deposition; molecular; beam; epitaxy; described; reproducibly; controlling; layer; thickness; varying; composition; process; particular; epitaxially; depositing; plurality; layers; material; substrate; growth; cycles; whereby; average; instantaneous; rates; cycle; remains; substantially; constant; function; time; growth rate; substantially constant; deposition process; molecular beam; beam epitaxy; layer thickness; remains substantially; growth rates; layer composition; /117/438/