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Title: Method of deposition by molecular beam epitaxy

Abstract

A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

Inventors:
 [1];  [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
AT & T CORP
OSTI Identifier:
869693
Patent Number(s):
5379719
Assignee:
Sandia National Laboratories (Albuquerque, NM)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; deposition; molecular; beam; epitaxy; described; reproducibly; controlling; layer; thickness; varying; composition; process; particular; epitaxially; depositing; plurality; layers; material; substrate; growth; cycles; whereby; average; instantaneous; rates; cycle; remains; substantially; constant; function; time; growth rate; substantially constant; deposition process; molecular beam; beam epitaxy; layer thickness; remains substantially; growth rates; layer composition; /117/438/

Citation Formats

Chalmers, Scott A, Killeen, Kevin P, and Lear, Kevin L. Method of deposition by molecular beam epitaxy. United States: N. p., 1995. Web.
Chalmers, Scott A, Killeen, Kevin P, & Lear, Kevin L. Method of deposition by molecular beam epitaxy. United States.
Chalmers, Scott A, Killeen, Kevin P, and Lear, Kevin L. Sun . "Method of deposition by molecular beam epitaxy". United States. https://www.osti.gov/servlets/purl/869693.
@article{osti_869693,
title = {Method of deposition by molecular beam epitaxy},
author = {Chalmers, Scott A and Killeen, Kevin P and Lear, Kevin L},
abstractNote = {A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}

Patent:

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