Method of deposition by molecular beam epitaxy
Abstract
A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 869693
- Patent Number(s):
- 5379719
- Assignee:
- Sandia National Laboratories (Albuquerque, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; deposition; molecular; beam; epitaxy; described; reproducibly; controlling; layer; thickness; varying; composition; process; particular; epitaxially; depositing; plurality; layers; material; substrate; growth; cycles; whereby; average; instantaneous; rates; cycle; remains; substantially; constant; function; time; growth rate; substantially constant; deposition process; molecular beam; beam epitaxy; layer thickness; remains substantially; growth rates; layer composition; /117/438/
Citation Formats
Chalmers, Scott A, Killeen, Kevin P, and Lear, Kevin L. Method of deposition by molecular beam epitaxy. United States: N. p., 1995.
Web.
Chalmers, Scott A, Killeen, Kevin P, & Lear, Kevin L. Method of deposition by molecular beam epitaxy. United States.
Chalmers, Scott A, Killeen, Kevin P, and Lear, Kevin L. Sun .
"Method of deposition by molecular beam epitaxy". United States. https://www.osti.gov/servlets/purl/869693.
@article{osti_869693,
title = {Method of deposition by molecular beam epitaxy},
author = {Chalmers, Scott A and Killeen, Kevin P and Lear, Kevin L},
abstractNote = {A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}
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Works referenced in this record:
A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors
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- Hong, M.; Mannaerts, J. P.; Hong, J. M.
- Journal of Crystal Growth, Vol. 111, Issue 1-4