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Title: Thin film hydrogen sensor

Abstract

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

Inventors:
 [1];  [2];  [1]
  1. (Oak Ridge, TN)
  2. (Knoxville, TN)
Issue Date:
Research Org.:
LOCKHEED MARTIN ENRGY SYST INC
OSTI Identifier:
869618
Patent Number(s):
5367283
Assignee:
Martin Marietta Energy Systems, Inc. (Oak Ridge, TN) ORNL
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
film; hydrogen; sensor; element; comprises; essentially; inert; electrically-insulating; substrate; thin-film; metallization; deposited; thereon; forms; resistors; layer; pd; alloy; sensing; underlying; intermediate; metal; providing; enhanced; adhesion; electrically; insulating; impermeable; passivation; covers; left; uncovered; difference; electrical; resistances; covered; resistor; related; concentration; gas; exposed; sensor element; passivation layer; hydrogen sensor; film hydrogen; essentially inert; hydrogen concentration; electrically insulating; metal layer; electrical resistance; deposited thereon; providing enhanced; metallization deposited; element comprises; film metal; insulating substrate; electrically-insulating substrate; enhanced adhesion; /338/73/422/

Citation Formats

Lauf, Robert J., Hoffheins, Barbara S., and Fleming, Pamela H. Thin film hydrogen sensor. United States: N. p., 1994. Web.
Lauf, Robert J., Hoffheins, Barbara S., & Fleming, Pamela H. Thin film hydrogen sensor. United States.
Lauf, Robert J., Hoffheins, Barbara S., and Fleming, Pamela H. Sat . "Thin film hydrogen sensor". United States. https://www.osti.gov/servlets/purl/869618.
@article{osti_869618,
title = {Thin film hydrogen sensor},
author = {Lauf, Robert J. and Hoffheins, Barbara S. and Fleming, Pamela H.},
abstractNote = {A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

Patent:

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