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Title: High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

Abstract

A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

Inventors:
 [1];  [2];  [3];  [4];  [5];  [5];  [5];  [5]
  1. Evergreen, CO
  2. Placitas, NM
  3. Madison, WI
  4. Sunnyvale, CA
  5. Albuquerque, NM
Issue Date:
Research Org.:
AT & T CORP
OSTI Identifier:
869576
Patent Number(s):
5358928
Application Number:
07/949,098
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
temperature; superconductor; step-edge; josephson; junctions; ti-ca-ba-cu-o; process; formulating; non-hysteretic; hysteretic; materials; results; ability; operate; temperatures; maintaining; uniformity; quality; junction; formed; step-etching; laalo; crystal; substrate; depositing; film; tlcabacuo; covering; step; forming; grain; boundary; subsequent; form; add; capacitance; current; embodiment; accomplished; adding; dielectric; layer; laa1o; followed; cap; normal; metal; titanium; gold; patterned; desired; geometry; josephson junction; cap layer; josephson junctions; normal metal; temperature superconductor; dielectric layer; grain boundary; crystal substrate; metal cap; /505/257/427/

Citation Formats

Ginley, David S, Hietala, Vincent M, Hohenwarter, Gert K. G., Martens, Jon S, Plut, Thomas A, Tigges, Chris P, Vawter, Gregory A, and Zipperian, Thomas E. High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O. United States: N. p., 1994. Web.
Ginley, David S, Hietala, Vincent M, Hohenwarter, Gert K. G., Martens, Jon S, Plut, Thomas A, Tigges, Chris P, Vawter, Gregory A, & Zipperian, Thomas E. High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O. United States.
Ginley, David S, Hietala, Vincent M, Hohenwarter, Gert K. G., Martens, Jon S, Plut, Thomas A, Tigges, Chris P, Vawter, Gregory A, and Zipperian, Thomas E. Tue . "High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O". United States. https://www.osti.gov/servlets/purl/869576.
@article{osti_869576,
title = {High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O},
author = {Ginley, David S and Hietala, Vincent M and Hohenwarter, Gert K. G. and Martens, Jon S and Plut, Thomas A and Tigges, Chris P and Vawter, Gregory A and Zipperian, Thomas E},
abstractNote = {A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {10}
}

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