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Title: High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.
Inventors:
 [1];  [2];  [3];  [4];  [5];  [5];  [5];  [5]
  1. (Evergreen, CO)
  2. (Placitas, NM)
  3. (Madison, WI)
  4. (Sunnyvale, CA)
  5. (Albuquerque, NM)
Issue Date:
OSTI Identifier:
869576
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
Patent Number(s):
US 5358928
Application Number:
07/949,098
Contract Number:
AC04-76DP00789
Research Org:
AT & T CORP
Country of Publication:
United States
Language:
English
Subject:
temperature; superconductor; step-edge; josephson; junctions; ti-ca-ba-cu-o; process; formulating; non-hysteretic; hysteretic; materials; results; ability; operate; temperatures; maintaining; uniformity; quality; junction; formed; step-etching; laalo; crystal; substrate; depositing; film; tlcabacuo; covering; step; forming; grain; boundary; subsequent; form; add; capacitance; current; embodiment; accomplished; adding; dielectric; layer; laa1o; followed; cap; normal; metal; titanium; gold; patterned; desired; geometry; josephson junction; cap layer; josephson junctions; normal metal; temperature superconductor; dielectric layer; grain boundary; crystal substrate; metal cap; /505/257/427/