Method for microwave plasma assisted supersonic gas jet deposition of thin films
Abstract
A thin film is formed on a substrate positioned in a vacuum chamber by use of a gas jet apparatus affixed to a vacuum chamber port and having an outer nozzle with an interior cavity into which carrier gas is fed, an inner nozzle located within the outer nozzle interior cavity into which reactant gas is introduced, a tip of the inner nozzle being recessed from the vacuum chamber port within the outer nozzle interior cavity, and a microwave discharge device configured about the apparatus for generating a discharge in the carrier gas and reactant gas only in a portion of the outer nozzle interior cavity extending from approximately the inner nozzle tip towards the vacuum chamber. A supersonic free jet of carrier gas transports vapor species generated in the microwave discharge to the surface of the substrate to form a thin film on the substrate. The substrate can be translated from the supersonic jet to a second supersonic jet in less time than needed to complete film formation so that the film is chemically composed of chemical reaction products of vapor species in the jets.
- Inventors:
- Issue Date:
- Research Org.:
- Jet Process Corporation, New Haven, CT (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 869561
- Patent Number(s):
- 5356672
- Application Number:
- 07/521,100
- Assignee:
- Jet Process Corporation (New Haven, CT)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- FG02-88ER13818
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 1991 May 09
- Country of Publication:
- United States
- Language:
- English
- Subject:
- /427/118/
Citation Formats
Schmitt, III, Jerome J., and Halpern, Bret L.. Method for microwave plasma assisted supersonic gas jet deposition of thin films. United States: N. p., 1994.
Web.
Schmitt, III, Jerome J., & Halpern, Bret L.. Method for microwave plasma assisted supersonic gas jet deposition of thin films. United States.
Schmitt, III, Jerome J., and Halpern, Bret L.. Sat .
"Method for microwave plasma assisted supersonic gas jet deposition of thin films". United States. https://www.osti.gov/servlets/purl/869561.
@article{osti_869561,
title = {Method for microwave plasma assisted supersonic gas jet deposition of thin films},
author = {Schmitt, III, Jerome J. and Halpern, Bret L.},
abstractNote = {A thin film is formed on a substrate positioned in a vacuum chamber by use of a gas jet apparatus affixed to a vacuum chamber port and having an outer nozzle with an interior cavity into which carrier gas is fed, an inner nozzle located within the outer nozzle interior cavity into which reactant gas is introduced, a tip of the inner nozzle being recessed from the vacuum chamber port within the outer nozzle interior cavity, and a microwave discharge device configured about the apparatus for generating a discharge in the carrier gas and reactant gas only in a portion of the outer nozzle interior cavity extending from approximately the inner nozzle tip towards the vacuum chamber. A supersonic free jet of carrier gas transports vapor species generated in the microwave discharge to the surface of the substrate to form a thin film on the substrate. The substrate can be translated from the supersonic jet to a second supersonic jet in less time than needed to complete film formation so that the film is chemically composed of chemical reaction products of vapor species in the jets.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}
Works referenced in this record:
Synthesis of diamond films in a rf induction thermal plasma
journal, September 1987
- Matsumoto, Seiichiro; Hino, Mototsugu; Kobayashi, Toyohiko
- Applied Physics Letters, Vol. 51, Issue 10
High-quality MNS capacitors prepared by jet vapor deposition at room temperature
journal, September 1992
- Wang, D.; Ma, T. -P.; Golz, J. W.
- IEEE Electron Device Letters, Vol. 13, Issue 9