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Title: Method for microwave plasma assisted supersonic gas jet deposition of thin films

Abstract

A thin film is formed on a substrate positioned in a vacuum chamber by use of a gas jet apparatus affixed to a vacuum chamber port and having an outer nozzle with an interior cavity into which carrier gas is fed, an inner nozzle located within the outer nozzle interior cavity into which reactant gas is introduced, a tip of the inner nozzle being recessed from the vacuum chamber port within the outer nozzle interior cavity, and a microwave discharge device configured about the apparatus for generating a discharge in the carrier gas and reactant gas only in a portion of the outer nozzle interior cavity extending from approximately the inner nozzle tip towards the vacuum chamber. A supersonic free jet of carrier gas transports vapor species generated in the microwave discharge to the surface of the substrate to form a thin film on the substrate. The substrate can be translated from the supersonic jet to a second supersonic jet in less time than needed to complete film formation so that the film is chemically composed of chemical reaction products of vapor species in the jets.

Inventors:
 [1];  [2]
  1. (New Haven, CT)
  2. (Bethany, CT)
Issue Date:
Research Org.:
SCHMITT TECHNOLOGY ASSOC
OSTI Identifier:
869561
Patent Number(s):
5356672
Assignee:
Jet Process Corporation (New Haven, CT) CHO
DOE Contract Number:  
FG02-88ER13818
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; microwave; plasma; assisted; supersonic; gas; jet; deposition; films; film; formed; substrate; positioned; vacuum; chamber; apparatus; affixed; outer; nozzle; interior; cavity; carrier; fed; inner; located; reactant; introduced; tip; recessed; discharge; device; configured; generating; portion; extending; approximately; towards; free; transports; vapor; species; generated; surface; form; translated; time; complete; formation; chemically; composed; chemical; reaction; products; jets; plasma assisted; microwave discharge; free jet; nozzle tip; interior cavity; supersonic jet; vapor species; gas jet; discharge device; carrier gas; vacuum chamber; chemical reaction; reaction product; reaction products; reactant gas; microwave plasma; species generated; supersonic gas; supersonic free; jet deposition; film formation; assisted supersonic; /427/118/

Citation Formats

Schmitt, III, Jerome J., and Halpern, Bret L. Method for microwave plasma assisted supersonic gas jet deposition of thin films. United States: N. p., 1994. Web.
Schmitt, III, Jerome J., & Halpern, Bret L. Method for microwave plasma assisted supersonic gas jet deposition of thin films. United States.
Schmitt, III, Jerome J., and Halpern, Bret L. Sat . "Method for microwave plasma assisted supersonic gas jet deposition of thin films". United States. https://www.osti.gov/servlets/purl/869561.
@article{osti_869561,
title = {Method for microwave plasma assisted supersonic gas jet deposition of thin films},
author = {Schmitt, III, Jerome J. and Halpern, Bret L.},
abstractNote = {A thin film is formed on a substrate positioned in a vacuum chamber by use of a gas jet apparatus affixed to a vacuum chamber port and having an outer nozzle with an interior cavity into which carrier gas is fed, an inner nozzle located within the outer nozzle interior cavity into which reactant gas is introduced, a tip of the inner nozzle being recessed from the vacuum chamber port within the outer nozzle interior cavity, and a microwave discharge device configured about the apparatus for generating a discharge in the carrier gas and reactant gas only in a portion of the outer nozzle interior cavity extending from approximately the inner nozzle tip towards the vacuum chamber. A supersonic free jet of carrier gas transports vapor species generated in the microwave discharge to the surface of the substrate to form a thin film on the substrate. The substrate can be translated from the supersonic jet to a second supersonic jet in less time than needed to complete film formation so that the film is chemically composed of chemical reaction products of vapor species in the jets.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

Patent:

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