skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Monolithic high voltage nonlinear transmission line fabrication process

Abstract

A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varactor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process.

Inventors:
 [1]
  1. 346 Primrose Dr., Pleasant Hill, CA 94523
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
869527
Patent Number(s):
5352627
Assignee:
Cooper, Gregory A. (346 Primrose Dr., Pleasant Hill, CA 94523)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
monolithic; voltage; nonlinear; transmission; line; fabrication; process; fabricating; sequential; inductors; varactor; diodes; gaas; disclosed; epitaxially; grown; laminate; produced; applying; doped; active; n-type; layer; n-plus; type; substrate; heavily; p-type; applied; ohmic; contacts; desired; multiple; layers; etched; oxygen; implanted; isolate; individual; insulator; conductive; inductive; thereafter; top; complete; nonlinear transmission; doped p-type; doped n-type; multiple layer; p-type layer; insulator layer; heavily doped; transmission line; ohmic contact; fabrication process; gaas substrate; multiple layers; ohmic contacts; n-type layer; gaas layer; thereafter applied; epitaxially grown; varactor diode; /435/257/333/438/

Citation Formats

Cooper, Gregory A. Monolithic high voltage nonlinear transmission line fabrication process. United States: N. p., 1994. Web.
Cooper, Gregory A. Monolithic high voltage nonlinear transmission line fabrication process. United States.
Cooper, Gregory A. Sat . "Monolithic high voltage nonlinear transmission line fabrication process". United States. https://www.osti.gov/servlets/purl/869527.
@article{osti_869527,
title = {Monolithic high voltage nonlinear transmission line fabrication process},
author = {Cooper, Gregory A},
abstractNote = {A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varactor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

Patent:

Save / Share: