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Title: Monolithic high voltage nonlinear transmission line fabrication process

A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varactor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process.
Inventors:
 [1]
  1. (346 Primrose Dr., Pleasant Hill, CA 94523)
Issue Date:
OSTI Identifier:
869527
Assignee:
Cooper, Gregory A. (346 Primrose Dr., Pleasant Hill, CA 94523) LLNL
Patent Number(s):
US 5352627
Contract Number:
W-7405-ENG-48
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Country of Publication:
United States
Language:
English
Subject:
monolithic; voltage; nonlinear; transmission; line; fabrication; process; fabricating; sequential; inductors; varactor; diodes; gaas; disclosed; epitaxially; grown; laminate; produced; applying; doped; active; n-type; layer; n-plus; type; substrate; heavily; p-type; applied; ohmic; contacts; desired; multiple; layers; etched; oxygen; implanted; isolate; individual; insulator; conductive; inductive; thereafter; top; complete; nonlinear transmission; doped p-type; doped n-type; multiple layer; p-type layer; insulator layer; heavily doped; transmission line; ohmic contact; fabrication process; gaas substrate; multiple layers; ohmic contacts; n-type layer; gaas layer; thereafter applied; epitaxially grown; varactor diode; /435/257/333/438/