Electrically injected visible vertical cavity surface emitting laser diodes

Schneider, Richard P; Lott, James A

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Title: Electrically injected visible vertical cavity surface emitting laser diodes

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Abstract

Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors.

Inventors:

Schneider, Richard P ^[1]; Lott, James A ^[1]

Albuquerque, NM

Issue Date:: 1994-01-01

Research Org.:: AT&T

OSTI Identifier:: 869521

Patent Number(s):: 5351256

Assignee:: United States of America as represented by United States (Washington, DC)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S5/18358 - {containing spacer layers to adjust the phase of the light wave in the cavity}
H01S5/18361 - {Structure of the reflectors, e.g. hybrid mirrors}
H01S5/3211 - {characterised by special cladding layers, e.g. details on band-discontinuities}
H01S5/34326 - {with a well layer based on InGa

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DOE Contract Number:: AC04-76DP00789

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: electrically; injected; visible; vertical; cavity; surface; emitting; laser; diodes; light; output; vscel; diode; enabled; addition; phase-matching; spacer; layers; active; region; form; optical; comprise; inalp; charge; carrier; confinement; means; distributed; bragg; reflector; formed; mirrors; charge carrier; cavity surface; bragg reflector; visible laser; laser diodes; active region; optical cavity; laser light; laser diode; light output; vertical cavity; surface emitting; spacer layers; carrier confinement; emitting laser; distributed bragg; spacer layer; electrically injected; /372/

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                    Schneider, Richard P, and Lott, James A. Electrically injected visible vertical cavity surface emitting laser diodes.  United States: N. p., 1994. 
        Web.

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                    Schneider, Richard P, & Lott, James A. Electrically injected visible vertical cavity surface emitting laser diodes.  United States.

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                    Schneider, Richard P, and Lott, James A. Sat .  
        "Electrically injected visible vertical cavity surface emitting laser diodes".  United States.  https://www.osti.gov/servlets/purl/869521.

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@article{osti_869521,

  title        = {Electrically injected visible vertical cavity surface emitting laser diodes},

  author       = {Schneider, Richard P and Lott, James A},

  abstractNote = {Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1994},

  month        = {1}

}

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Electrically injected visible vertical cavity surface emitting laser diodes

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Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors. 5 figs.
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