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Title: Thin film battery and method for making same

Abstract

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Inventors:
 [1];  [2];  [1];  [2]
  1. Oak Ridge, TN
  2. Knoxville, TN
Issue Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
869450
Patent Number(s):
5338625
Assignee:
Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01M - PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
film; battery; method; described; thin-film; especially; microbattery; application; backup; primary; integrated; power; source; electronic; devices; novel; electrolyte; electrochemically; stable; react; lithium; anode; vanadium; oxide; cathode; configured; fabricated; directly; semiconductor; chip; die; portion; carrier; specified; size; shape; meet; requirements; particular; solid; materials; capable; operation; -15; degree; 150; semiconductor die; specified size; primary integrated; oxide cathode; novel electrolyte; novel vanadium; cathode configured; semiconductor chip; thin-film microbattery; fabricated directly; integrated power; lithium anode; vanadium oxide; particular application; power source; chip carrier; electronic devices; electrochemically stable; thin-film battery; film battery; electronic device; chemically stable; /429/

Citation Formats

Bates, John B, Dudney, Nancy J, Gruzalski, Greg R, and Luck, Christopher F. Thin film battery and method for making same. United States: N. p., 1994. Web.
Bates, John B, Dudney, Nancy J, Gruzalski, Greg R, & Luck, Christopher F. Thin film battery and method for making same. United States.
Bates, John B, Dudney, Nancy J, Gruzalski, Greg R, and Luck, Christopher F. Sat . "Thin film battery and method for making same". United States. https://www.osti.gov/servlets/purl/869450.
@article{osti_869450,
title = {Thin film battery and method for making same},
author = {Bates, John B and Dudney, Nancy J and Gruzalski, Greg R and Luck, Christopher F},
abstractNote = {Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 1994},
month = {Sat Jan 01 00:00:00 EST 1994}
}

Works referenced in this record:

A Thin Film Solid State Nicrobattery for Use in Powering Nicrosensors
journal, January 1990


The use of ionic and mixed conductive glasses in microbatteries
journal, July 1989