Method of digital epilaxy by externally controlled closed-loop feedback
Abstract
A method and apparatus for digital epitaxy. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced.
- Inventors:
-
- Knoxville, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 869390
- Patent Number(s):
- 5330610
- Assignee:
- Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; digital; epilaxy; externally; controlled; closed-loop; feedback; apparatus; epitaxy; pulsed; gas; delivery; assembly; supplies; gaseous; material; substrate; form; adsorption; layer; structure; provided; measuring; isothermal; desorption; spectrum; growth; surface; monitor; active; sites; available; vacuum; chamber; housing; facilitates; evacuation; adjacent; following; exposure; achieved; exposing; pulse; monitored; formation; determine; filled; terminated; unreacted; portion; evacuated; continuous; pumping; subsequently; applied; availability; determined; studying; steps; repeated; film; sufficient; thickness; produced; adsorption layer; pulsed gas; chamber housing; continuous pumping; growth surface; sufficient thickness; active sites; vacuum chamber; gaseous material; gas delivery; substrate following; digital epitaxy; closed-loop feedback; gas pulse; supplies gaseous; thermal desorption; externally controlled; loop feedback; controlled closed-loop; delivery assembly; /117/
Citation Formats
Eres, Djula, and Sharp, Jeffrey W. Method of digital epilaxy by externally controlled closed-loop feedback. United States: N. p., 1994.
Web.
Eres, Djula, & Sharp, Jeffrey W. Method of digital epilaxy by externally controlled closed-loop feedback. United States.
Eres, Djula, and Sharp, Jeffrey W. Sat .
"Method of digital epilaxy by externally controlled closed-loop feedback". United States. https://www.osti.gov/servlets/purl/869390.
@article{osti_869390,
title = {Method of digital epilaxy by externally controlled closed-loop feedback},
author = {Eres, Djula and Sharp, Jeffrey W},
abstractNote = {A method and apparatus for digital epitaxy. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}
Works referenced in this record:
Atomic layer epitaxy
journal, August 1986
- Goodman, Colin H. L.; Pessa, Markus V.
- Journal of Applied Physics, Vol. 60, Issue 3
New approach to the atomic layer epitaxy of GaAs using a fast gas stream
journal, October 1988
- Ozeki, M.; Mochizuki, K.; Ohtsuka, N.
- Applied Physics Letters, Vol. 53, Issue 16