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Title: Conversion of fullerenes to diamond

Abstract

A method of forming synthetic diamond on a substrate. The method involves providing a substrate surface covered with a fullerene or diamond coating, positioning a fullerene in an ionization source, creating a fullerene vapor, ionizing fullerene molecules, accelerating the fullerene ions to energies above 250 eV to form a fullerene ion beam, impinging the fullerene ion beam on the substrate surface and continuing these steps to obtain a diamond film thickness on the substrate.

Inventors:
 [1]
  1. (1324 59th St., Downers Grove, IL 60515)
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL
OSTI Identifier:
869386
Patent Number(s):
5328676
Assignee:
Gruen, Dieter M. (1324 59th St., Downers Grove, IL 60515) ANL
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
conversion; fullerenes; diamond; method; forming; synthetic; substrate; involves; providing; surface; covered; fullerene; coating; positioning; ionization; source; creating; vapor; ionizing; molecules; accelerating; energies; 250; form; beam; impinging; continuing; steps; obtain; film; thickness; forming synthetic; diamond coating; synthetic diamond; film thickness; method involves; substrate surface; diamond film; ionization source; involves providing; fullerene molecules; surface covered; fullerene vapor; method involve; surface cover; /423/204/427/

Citation Formats

Gruen, Dieter M. Conversion of fullerenes to diamond. United States: N. p., 1994. Web.
Gruen, Dieter M. Conversion of fullerenes to diamond. United States.
Gruen, Dieter M. Sat . "Conversion of fullerenes to diamond". United States. https://www.osti.gov/servlets/purl/869386.
@article{osti_869386,
title = {Conversion of fullerenes to diamond},
author = {Gruen, Dieter M.},
abstractNote = {A method of forming synthetic diamond on a substrate. The method involves providing a substrate surface covered with a fullerene or diamond coating, positioning a fullerene in an ionization source, creating a fullerene vapor, ionizing fullerene molecules, accelerating the fullerene ions to energies above 250 eV to form a fullerene ion beam, impinging the fullerene ion beam on the substrate surface and continuing these steps to obtain a diamond film thickness on the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

Patent:

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