Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching
Abstract
A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 869344
- Patent Number(s):
- 5319659
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- semiconductor; diode; laser; intracavity; spatial; phase; controller; beam; control; switching; high-power; broad-area; disclosed; integrated; easily; formed; patterning; electrical; contact; metallization; layer; fabricating; changes; normally; broad; far-field; emission; single-lobed; near-diffraction-limited; pulsed; output; powers; 400; mw; operating; modes; thermal; mode; exist; allowing; steering; operation; switched; scanned; example; range; degrees; structure; phase controller; spatial phase; semiconductor laser; electrical contact; field emission; diode laser; output power; semiconductor diode; intracavity spatial; output powers; operating modes; easily form; phase control; operating mode; broad-area semiconductor; /372/
Citation Formats
Hohimer, John P. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching. United States: N. p., 1994.
Web.
Hohimer, John P. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching. United States.
Hohimer, John P. Sat .
"Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching". United States. https://www.osti.gov/servlets/purl/869344.
@article{osti_869344,
title = {Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching},
author = {Hohimer, John P},
abstractNote = {A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}
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Works referenced in this record:
Integrated injection‐locked high‐power cw diode laser arrays
journal, August 1989
- Hohimer, J. P.; Myers, D. R.; Brennan, T. M.
- Applied Physics Letters, Vol. 55, Issue 6
Injection‐locking characteristics of gain‐guided diode laser arrays with an ‘‘on‐chip’’ master laser
journal, April 1990
- Hohimer, J. P.; Myers, D. R.; Brennan, T. M.
- Applied Physics Letters, Vol. 56, Issue 16
Modal analysis of semiconductor lasers with nonplanar mirrors
journal, March 1986
- Lang, R.; Salzman, J.; Yariv, A.
- IEEE Journal of Quantum Electronics, Vol. 22, Issue 3
Analysis of a double-heterostructure spatial-phase controller for diode-laser beam steering
journal, December 1988
- Mukai, S.; Watanabe, M.; Itoh, H.
- IEEE Journal of Quantum Electronics, Vol. 24, Issue 12
High power, high brightness 2 W (200 μm) and 3 W (500 μm) CW AlGaAs laser diode arrays with long lifetimes
journal, May 1990
- Sakamoto, M.; Welch, D. F.; Yao, H.
- Electronics Letters, Vol. 26, Issue 11
Beam scanning and switching characteristics of twin-striped lasers with a reduced stripe spacing
journal, January 1985
- Mukai, S.; Watanabe, M.; Itoh, H.
- Optical and Quantum Electronics, Vol. 17, Issue 6
Tilted‐mirror semiconductor lasers
journal, July 1985
- Salzman, J.; Lang, R.; Margalit, S.
- Applied Physics Letters, Vol. 47, Issue 1
Laser beam scanning using a local deflector integrated with an effective mode filter
journal, December 1987
- Mukai, S.; Kaneko, Y.; Watanabe, M.
- Applied Physics Letters, Vol. 51, Issue 25
Interelement coupling in gain‐guided diode laser arrays
journal, June 1986
- Hohimer, J. P.; Hadley, G. R.; Owyoung, A.
- Applied Physics Letters, Vol. 48, Issue 22
Beam scanning with twin‐stripe injection lasers
journal, October 1978
- Scifres, D. R.; Streifer, W.; Burnham, R. D.
- Applied Physics Letters, Vol. 33, Issue 8
Near‐diffraction‐limited angle‐switchable output beam from a broad‐area diode laser with an intracavity spatial phase controller
journal, June 1991
- Hohimer, J. P.; Craft, D. C.; Vawter, G. A.
- Applied Physics Letters, Vol. 58, Issue 25