Heterojunction solar cell with passivated emitter surface

Title: Heterojunction solar cell with passivated emitter surface

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Abstract

A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

Inventors:

Olson, Jerry M ^[1]; Kurtz, Sarah R ^[2]

Lakewood, CO
Golden, CO

Issue Date:: 1994-01-01

Research Org.:: Midwest Research Institute, Kansas City, MO (United States)

OSTI Identifier:: 869329

Patent Number(s):: 5316593

Assignee:: Midwest Research Institute (Kansas City, MO)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0735 - comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/02168 - {the coatings being antireflective or having enhancing optical properties for the solar cells}

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DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: heterojunction; solar; cell; passivated; emitter; surface; high-efficiency; layer; preferably; 52; 48; forms; gaas; absorber; passivating; window; defined; composition; disposed; conversion; efficiency; 25; substrate; anti-reflection; coating; window layer; heterojunction solar; emitter layer; conversion efficiency; solar cell; absorber layer; anti-reflection coating; junction solar; preferably disposed; passivating layer; defined composition; gaas absorber; emitter surface; /136/257/

Citation Formats


                    Olson, Jerry M, and Kurtz, Sarah R. Heterojunction solar cell with passivated emitter surface.  United States: N. p., 1994. 
        Web.

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                    Olson, Jerry M, & Kurtz, Sarah R. Heterojunction solar cell with passivated emitter surface.  United States.

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                    Olson, Jerry M, and Kurtz, Sarah R. Sat .  
        "Heterojunction solar cell with passivated emitter surface".  United States.  https://www.osti.gov/servlets/purl/869329.

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@article{osti_869329,

  title        = {Heterojunction solar cell with passivated emitter surface},

  author       = {Olson, Jerry M and Kurtz, Sarah R},

  abstractNote = {A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1994},

  month        = {1}

}

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