Heterojunction solar cell with passivated emitter surface

Olson, Jerry M; Kurtz, Sarah R

Title: Heterojunction solar cell with passivated emitter surface

Abstract

A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

Inventors:

Olson, Jerry M ^[1]; Kurtz, Sarah R ^[2]

Lakewood, CO
Golden, CO

Issue Date:: 1994-01-01

Research Org.:: Midwest Research Institute, Kansas City, MO (United States)

OSTI Identifier:: 869329

Patent Number(s):: 5316593

Assignee:: Midwest Research Institute (Kansas City, MO)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0735 - comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/02168 - {the coatings being antireflective or having enhancing optical properties for the solar cells}

Show less

DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: heterojunction; solar; cell; passivated; emitter; surface; high-efficiency; layer; preferably; 52; 48; forms; gaas; absorber; passivating; window; defined; composition; disposed; conversion; efficiency; 25; substrate; anti-reflection; coating; window layer; heterojunction solar; emitter layer; conversion efficiency; solar cell; absorber layer; anti-reflection coating; junction solar; preferably disposed; passivating layer; defined composition; gaas absorber; emitter surface; /136/257/

Citation Formats


                    Olson, Jerry M, and Kurtz, Sarah R. Heterojunction solar cell with passivated emitter surface.  United States: N. p., 1994. 
        Web.

Copy to clipboard


                    Olson, Jerry M, & Kurtz, Sarah R. Heterojunction solar cell with passivated emitter surface.  United States.

Copy to clipboard


                    Olson, Jerry M, and Kurtz, Sarah R. Sat .  
        "Heterojunction solar cell with passivated emitter surface".  United States.  https://www.osti.gov/servlets/purl/869329.

Copy to clipboard


                    
@article{osti_869329,

  title        = {Heterojunction solar cell with passivated emitter surface},

  author       = {Olson, Jerry M and Kurtz, Sarah R},

  abstractNote = {A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1994},

  month        = {1}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Material and device considerations for cascade solar cells
journal, April 1980

Bedair, S. M.; Phatak, S. B.; Hauser, J. R.
IEEE Transactions on Electron Devices, Vol. 27, Issue 4
https://doi.org/10.1109/T-ED.1980.19942

Similar Records in DOE Patents and OSTI.GOV collections:

Heterojunction solar cell with passivated emitter surface

Patent Olson, J M; Kurtz, S R

A high-efficiency heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer. 1 fig.
InGaAsN/GaAs heterojunction for multi-junction solar cells

Patent Kurtz, Steven R [Albuquerque, NM]; Allerman, Andrew A [Albuquerque, NM]; Klem, John F [Albuquerque, NM]; ...

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.
Full Text Available
Heterojunction solar cell

Patent Olson, Jerry M [Lakewood, CO]

A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.
Full Text Available
Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

Patent Mickelsen, Reid A [Bellevue, WA]; Chen, Wen S [Seattle, WA]

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor materialmore » « less
Full Text Available
Mixed ternary heterojunction solar cell

Patent Chen, Wen S [Seattle, WA]; Stewart, John M [Seattle, WA]

A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.
Full Text Available

Similar Records

Title: Heterojunction solar cell with passivated emitter surface

Abstract

Citation Formats

Material and device considerations for cascade solar cells journal, April 1980

Material and device considerations for cascade solar cells
journal, April 1980