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Title: Heterojunction solar cell with passivated emitter surface

Abstract

A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

Inventors:
 [1];  [2]
  1. Lakewood, CO
  2. Golden, CO
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
OSTI Identifier:
869329
Patent Number(s):
5316593
Assignee:
Midwest Research Institute (Kansas City, MO)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
heterojunction; solar; cell; passivated; emitter; surface; high-efficiency; layer; preferably; 52; 48; forms; gaas; absorber; passivating; window; defined; composition; disposed; conversion; efficiency; 25; substrate; anti-reflection; coating; window layer; heterojunction solar; emitter layer; conversion efficiency; solar cell; absorber layer; anti-reflection coating; junction solar; preferably disposed; passivating layer; defined composition; gaas absorber; emitter surface; /136/257/

Citation Formats

Olson, Jerry M, and Kurtz, Sarah R. Heterojunction solar cell with passivated emitter surface. United States: N. p., 1994. Web.
Olson, Jerry M, & Kurtz, Sarah R. Heterojunction solar cell with passivated emitter surface. United States.
Olson, Jerry M, and Kurtz, Sarah R. Sat . "Heterojunction solar cell with passivated emitter surface". United States. https://www.osti.gov/servlets/purl/869329.
@article{osti_869329,
title = {Heterojunction solar cell with passivated emitter surface},
author = {Olson, Jerry M and Kurtz, Sarah R},
abstractNote = {A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

Patent:

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