DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High performance static latches with complete single event upset immunity

Abstract

An asymmetric response latch providing immunity to single event upset without loss of speed. The latch has cross-coupled inverters having a hardened logic state and a soft state, wherein the logic state of the first inverter can only be changed when the voltage on the coupling node of that inverter is low and the logic state of the second inverter can only be changed when the coupling of that inverter is high. One of more of the asymmetric response latches may be configured into a memory cell having complete immunity, which protects information rather than logic states.

Inventors:
 [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
AT&T
OSTI Identifier:
869264
Patent Number(s):
5307142
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
performance; static; latches; complete; single; event; upset; immunity; asymmetric; response; latch; providing; loss; speed; cross-coupled; inverters; hardened; logic; soft; inverter; changed; voltage; coupling; node; configured; memory; cell; protects; information; single event; memory cell; event upset; static latch; /365/714/

Citation Formats

Corbett, Wayne T, and Weaver, Harry T. High performance static latches with complete single event upset immunity. United States: N. p., 1994. Web.
Corbett, Wayne T, & Weaver, Harry T. High performance static latches with complete single event upset immunity. United States.
Corbett, Wayne T, and Weaver, Harry T. Sat . "High performance static latches with complete single event upset immunity". United States. https://www.osti.gov/servlets/purl/869264.
@article{osti_869264,
title = {High performance static latches with complete single event upset immunity},
author = {Corbett, Wayne T and Weaver, Harry T},
abstractNote = {An asymmetric response latch providing immunity to single event upset without loss of speed. The latch has cross-coupled inverters having a hardened logic state and a soft state, wherein the logic state of the first inverter can only be changed when the voltage on the coupling node of that inverter is low and the logic state of the second inverter can only be changed when the coupling of that inverter is high. One of more of the asymmetric response latches may be configured into a memory cell having complete immunity, which protects information rather than logic states.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 1994},
month = {Sat Jan 01 00:00:00 EST 1994}
}

Works referenced in this record:

A proposed new structure for SEU immunity in SRAM employing drain resistance
journal, November 1987


Comparison of Analytical Models and Experimental Results for Single Event Upset in CMOS SRAMs
journal, January 1983


An SEU Tolerant Memory Cell Derived from Fundamental Studies of SEU Mechanisms in SRAM
journal, January 1987


An SEU-hardened CMOS data latch design
journal, January 1988