Back-side hydrogenation technique for defect passivation in silicon solar cells
Abstract
A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts.
- Inventors:
-
- Denver, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 869240
- Patent Number(s):
- 5304509
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- back-side; hydrogenation; technique; defect; passivation; silicon; solar; cells; two-step; process; steps; bombarding; substrate; hydrogen; intensities; time; sufficient; implant; atoms; potentially; passivate; substantially; defects; impurities; illuminating; electromagnetic; radiation; activate; implanted; illumination; step; annihilates; hydrogen-induced; carried; according; two-stage; schedule; low-power; stage; subjects; intensity; drive; high-power; annihilate; sinter; alloy; metal; contacts; hydrogenation process; sufficient intensity; hydrogen atoms; metal contact; time sufficient; electromagnetic radiation; solar cell; solar cells; silicon substrate; silicon solar; hydrogen atom; metal contacts; back-side hydrogenation; /438/136/148/
Citation Formats
Sopori, Bhushan L. Back-side hydrogenation technique for defect passivation in silicon solar cells. United States: N. p., 1994.
Web.
Sopori, Bhushan L. Back-side hydrogenation technique for defect passivation in silicon solar cells. United States.
Sopori, Bhushan L. Sat .
"Back-side hydrogenation technique for defect passivation in silicon solar cells". United States. https://www.osti.gov/servlets/purl/869240.
@article{osti_869240,
title = {Back-side hydrogenation technique for defect passivation in silicon solar cells},
author = {Sopori, Bhushan L},
abstractNote = {A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}