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Title: CVD method for forming B.sub.i -containing oxide superconducting films

Abstract

Films of high T.sub.c Bi-Sr-Ca-Cu-O superconductor have been prepared by MOCVD using volatile metal organic precursors and water vapor. The metal organic precursors are volatized along with a bismuth source, such as Bi(C.sub.6 H.sub.5).sub.3, deposited on a heated substrate to form a film, and annealed.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Northwestern Univ., Evanston, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
869203
Patent Number(s):
5296460
Application Number:
07/926,156
Assignee:
Northwestern University (Evanston, IL)
Patent Classifications (CPCs):
C - CHEMISTRY C07 - ORGANIC CHEMISTRY C07C - ACYCLIC OR CARBOCYCLIC COMPOUNDS
C - CHEMISTRY C07 - ORGANIC CHEMISTRY C07F - ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
DOE Contract Number:  
FG02-86ER13511
Resource Type:
Patent
Resource Relation:
Patent File Date: 1992 Aug 05
Country of Publication:
United States
Language:
English
Subject:
cvd; method; forming; -containing; oxide; superconducting; films; bi-sr-ca-cu-o; superconductor; prepared; mocvd; volatile; metal; organic; precursors; water; vapor; volatized; bismuth; source; deposited; heated; substrate; form; film; annealed; metal organic; -sr-ca-cu-o superconductor; superconducting film; oxide superconducting; water vapor; heated substrate; superconducting films; conducting films; organic precursors; organic precursor; conducting film; volatile metal; bi-sr-ca-cu-o superconductor; cvd method; /505/427/

Citation Formats

Wessels, Bruce W., Marks, Tobin J., Richeson, Darrin S., Tonge, Lauren M., and Zhang, Jiming. CVD method for forming B.sub.i -containing oxide superconducting films. United States: N. p., 1994. Web.
Wessels, Bruce W., Marks, Tobin J., Richeson, Darrin S., Tonge, Lauren M., & Zhang, Jiming. CVD method for forming B.sub.i -containing oxide superconducting films. United States.
Wessels, Bruce W., Marks, Tobin J., Richeson, Darrin S., Tonge, Lauren M., and Zhang, Jiming. Sat . "CVD method for forming B.sub.i -containing oxide superconducting films". United States. https://www.osti.gov/servlets/purl/869203.
@article{osti_869203,
title = {CVD method for forming B.sub.i -containing oxide superconducting films},
author = {Wessels, Bruce W. and Marks, Tobin J. and Richeson, Darrin S. and Tonge, Lauren M. and Zhang, Jiming},
abstractNote = {Films of high T.sub.c Bi-Sr-Ca-Cu-O superconductor have been prepared by MOCVD using volatile metal organic precursors and water vapor. The metal organic precursors are volatized along with a bismuth source, such as Bi(C.sub.6 H.sub.5).sub.3, deposited on a heated substrate to form a film, and annealed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 1994},
month = {Sat Jan 01 00:00:00 EST 1994}
}

Works referenced in this record:

Chemical vapor deposition of YBa 2 Cu 3 O 7 using metalorganic chelate precursors
journal, October 1988


Growth of superconducting thin films of bismuth-strontium-calcium-copper oxide by organometallic chemical vapor deposition
journal, October 1988


Organometallic chemical vapor deposition of high T c superconducting films using a volatile, fluorocarbon‐based precursor
journal, October 1988


Formation of Bismuth Strontium Calcium Copper Oxide Superconducting Films by Chemical Vapor Deposition
journal, August 1988


Superconducting Bi-Sr-Ca-Cu-O Thin Films Grown by Metalorganic Chemical Vapor Deposition at Different Temperatures
journal, September 1989


Preparation of Bi-Sr-Ca-Cu-O Superconducting Films by CVD
journal, May 1989


Organometallic chemical vapor deposition of high T c superconducting Bi‐Sr‐Ca‐Cu‐O films
journal, March 1989