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Title: CVD method for forming B.sub.i -containing oxide superconducting films

Films of high T.sub.c Bi-Sr-Ca-Cu-O superconductor have been prepared by MOCVD using volatile metal organic precursors and water vapor. The metal organic precursors are volatized along with a bismuth source, such as Bi(C.sub.6 H.sub.5).sub.3, deposited on a heated substrate to form a film, and annealed.
 [1];  [2];  [2];  [3];  [4]
  1. (Wilmette, IL)
  2. (Evanston, IL)
  3. (Sanford, MI)
  4. (Chicago, IL)
Issue Date:
OSTI Identifier:
Northwestern University (Evanston, IL) CHO
Patent Number(s):
US 5296460
Contract Number:
Research Org:
Northwestern University
Country of Publication:
United States
cvd; method; forming; -containing; oxide; superconducting; films; bi-sr-ca-cu-o; superconductor; prepared; mocvd; volatile; metal; organic; precursors; water; vapor; volatized; bismuth; source; deposited; heated; substrate; form; film; annealed; metal organic; -sr-ca-cu-o superconductor; superconducting film; oxide superconducting; water vapor; heated substrate; superconducting films; conducting films; organic precursors; organic precursor; conducting film; volatile metal; bi-sr-ca-cu-o superconductor; cvd method; /505/427/