Global to push GA events into
skip to main content

Title: Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same

An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises Ytterbium doped apatite (Yb:Ca.sub.5 (PO.sub.4).sub.3 F) or Yb:FAP, or ytterbium doped crystals that are structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode.
Inventors:
 [1];  [2];  [3];  [4]
  1. (Pleasanton, CA)
  2. (Castro Valley, CA)
  3. (Livermore, CA)
  4. (Salida, CA)
Issue Date:
OSTI Identifier:
869131
Assignee:
United States Department of Energy (Washington, DC) LLNL
Patent Number(s):
US 5280492
Contract Number:
W-7405-ENG-48
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Country of Publication:
United States
Language:
English
Subject:
fap; related; materials; laser; medium; comprising; systems; ytterbium; doped; material; remarkably; superior; including; yag; comprises; apatite; crystals; structurally; pumped; diode; pump; sources; output; near; 905; microns; 98; ingaas; alingaas; narrowband; operated; conventional; ground; depletion; mode; medium comprising; related materials; pump sources; laser material; laser systems; ytterbium doped; structurally related; pump source; diode pump; doped laser; /372/