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Title: Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same

Abstract

An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises Ytterbium doped apatite (Yb:Ca.sub.5 (PO.sub.4).sub.3 F) or Yb:FAP, or ytterbium doped crystals that are structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode.

Inventors:
 [1];  [2];  [3];  [4]
  1. Pleasanton, CA
  2. Castro Valley, CA
  3. Livermore, CA
  4. Salida, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
869131
Patent Number(s):
5280492
Assignee:
United States Department of Energy (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
fap; related; materials; laser; medium; comprising; systems; ytterbium; doped; material; remarkably; superior; including; yag; comprises; apatite; crystals; structurally; pumped; diode; pump; sources; output; near; 905; microns; 98; ingaas; alingaas; narrowband; operated; conventional; ground; depletion; mode; medium comprising; related materials; pump sources; laser material; laser systems; ytterbium doped; structurally related; pump source; diode pump; doped laser; /372/

Citation Formats

Krupke, William F, Payne, Stephen A, Chase, Lloyd L, and Smith, Larry K. Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same. United States: N. p., 1994. Web.
Krupke, William F, Payne, Stephen A, Chase, Lloyd L, & Smith, Larry K. Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same. United States.
Krupke, William F, Payne, Stephen A, Chase, Lloyd L, and Smith, Larry K. Sat . "Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same". United States. https://www.osti.gov/servlets/purl/869131.
@article{osti_869131,
title = {Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same},
author = {Krupke, William F and Payne, Stephen A and Chase, Lloyd L and Smith, Larry K},
abstractNote = {An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises Ytterbium doped apatite (Yb:Ca.sub.5 (PO.sub.4).sub.3 F) or Yb:FAP, or ytterbium doped crystals that are structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

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