Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same

Krupke, William F; Payne, Stephen A; Chase, Lloyd L; Smith, Larry K

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Title: Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same

Abstract

An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises Ytterbium doped apatite (Yb:Ca.sub.5 (PO.sub.4).sub.3 F) or Yb:FAP, or ytterbium doped crystals that are structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode.

Inventors:

Krupke, William F ^[1]; Payne, Stephen A ^[2]; Chase, Lloyd L ^[3]; Smith, Larry K ^[4]

Pleasanton, CA
Castro Valley, CA
Livermore, CA
Salida, CA

Issue Date:: 1994-01-01

Research Org.:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

OSTI Identifier:: 869131

Patent Number(s):: 5280492

Assignee:: United States Department of Energy (Washington, DC)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
C30B29/10 - Inorganic compounds or compositions

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S3/16 - Solid materials
H01S3/1618 - {ytterbium}

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: fap; related; materials; laser; medium; comprising; systems; ytterbium; doped; material; remarkably; superior; including; yag; comprises; apatite; crystals; structurally; pumped; diode; pump; sources; output; near; 905; microns; 98; ingaas; alingaas; narrowband; operated; conventional; ground; depletion; mode; medium comprising; related materials; pump sources; laser material; laser systems; ytterbium doped; structurally related; pump source; diode pump; doped laser; /372/

Citation Formats


                    Krupke, William F, Payne, Stephen A, Chase, Lloyd L, and Smith, Larry K. Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same.  United States: N. p., 1994. 
        Web.

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                    Krupke, William F, Payne, Stephen A, Chase, Lloyd L, & Smith, Larry K. Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same.  United States.

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                    Krupke, William F, Payne, Stephen A, Chase, Lloyd L, and Smith, Larry K. Sat .  
        "Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same".  United States.  https://www.osti.gov/servlets/purl/869131.

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@article{osti_869131,

  title        = {Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same},

  author       = {Krupke, William F and Payne, Stephen A and Chase, Lloyd L and Smith, Larry K},

  abstractNote = {An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises Ytterbium doped apatite (Yb:Ca.sub.5 (PO.sub.4).sub.3 F) or Yb:FAP, or ytterbium doped crystals that are structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1994},

  month        = {1}

}

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Works referenced in this record:

The Growth and Crystallographic Properties of Calcium Fluor- and Chlorapatite Crystals
journal, January 1967

Prener, J. S.
Journal of The Electrochemical Society, Vol. 114, Issue 1
https://doi.org/10.1149/1.2426512

1-mJ/pulse Tm:YAG laser pumped by a 3-W diode laser
journal, January 1991

Suni, Paul J. M.; Henderson, Sammy W.
Optics Letters, Vol. 16, Issue 11
https://doi.org/10.1364/OL.16.000817

Spectroscopic and Laser Characteristics of Neodymium-doped Calcium Fluorophosphate
journal, January 1968

Ohlmann, R. C.; Steinbruegge, K. B.; Mazelsky, R.
Applied Optics, Vol. 7, Issue 5
https://doi.org/10.1364/AO.7.000905

Ground-state depleted solid-state lasers: principles, characteristics and scaling
journal, July 1990

Krupke, William F.; Chase, L. L.
Optical and Quantum Electronics, Vol. 22, Issue S1
https://doi.org/10.1007/BF02088996

GaAs: Si LED Pumped Yb‐Doped YAG Laser
journal, July 1971

Reinberg, A. R.; Riseberg, L. A.; Brown, R. M.
Applied Physics Letters, Vol. 19, Issue 1
https://doi.org/10.1063/1.1653723

Diode-Pumped Single-Frequency Lasers and Q-Switched Laser Using Tm:YAG and Tm,Ho:YAG
conference, January 1991

Kane, Thomas J.; Kubo, Tracy S.
Advanced Solid State Lasers
https://doi.org/10.1364/ASSL.1990.ML3

High power, high efficient neodymium:yttrium aluminum garnet laser end pumped by a laser diode array
journal, October 1987

Berger, Josef; Welch, David F.; Scifres, Don R.
Applied Physics Letters, Vol. 51, Issue 16
https://doi.org/10.1063/1.98733

Single-Mode Lasing of Ho:Tm:YAG at 2.091 µm in a Monolithic Crystal
conference, January 1991

Storm, Mark E.; Koch, Grady J.; Rohrbach, Wayne W.
Advanced Solid State Lasers
https://doi.org/10.1364/ASSL.1990.ML4

Two‐dimensional array of high‐power strained quantum well lasers with λ=0.95 μm
journal, June 1989

Bour, D. P.; Stabile, P.; Rosen, A.
Applied Physics Letters, Vol. 54, Issue 26
https://doi.org/10.1063/1.101020

Diode laser-pumped solid-state lasers
journal, June 1988

Fan, T. Y.; Byer, R. L.
IEEE Journal of Quantum Electronics, Vol. 24, Issue 6
https://doi.org/10.1109/3.210

Room-temperature diode-pumped Yb:YAG laser
journal, January 1991

Lacovara, P.; Choi, H. K.; Wang, C. A.
Optics Letters, Vol. 16, Issue 14
https://doi.org/10.1364/OL.16.001089

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Similar Records

Title: Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same

Abstract

Citation Formats

The Growth and Crystallographic Properties of Calcium Fluor- and Chlorapatite Crystals journal, January 1967

1-mJ/pulse Tm:YAG laser pumped by a 3-W diode laser journal, January 1991

Spectroscopic and Laser Characteristics of Neodymium-doped Calcium Fluorophosphate journal, January 1968

Ground-state depleted solid-state lasers: principles, characteristics and scaling journal, July 1990

GaAs: Si LED Pumped Yb‐Doped YAG Laser journal, July 1971

Diode-Pumped Single-Frequency Lasers and Q-Switched Laser Using Tm:YAG and Tm,Ho:YAG conference, January 1991

High power, high efficient neodymium:yttrium aluminum garnet laser end pumped by a laser diode array journal, October 1987

Single-Mode Lasing of Ho:Tm:YAG at 2.091 µm in a Monolithic Crystal conference, January 1991

Two‐dimensional array of high‐power strained quantum well lasers with λ=0.95 μm journal, June 1989

Diode laser-pumped solid-state lasers journal, June 1988

Room-temperature diode-pumped Yb:YAG laser journal, January 1991

The Growth and Crystallographic Properties of Calcium Fluor- and Chlorapatite Crystals
journal, January 1967

1-mJ/pulse Tm:YAG laser pumped by a 3-W diode laser
journal, January 1991

Spectroscopic and Laser Characteristics of Neodymium-doped Calcium Fluorophosphate
journal, January 1968

Ground-state depleted solid-state lasers: principles, characteristics and scaling
journal, July 1990

GaAs: Si LED Pumped Yb‐Doped YAG Laser
journal, July 1971

Diode-Pumped Single-Frequency Lasers and Q-Switched Laser Using Tm:YAG and Tm,Ho:YAG
conference, January 1991

High power, high efficient neodymium:yttrium aluminum garnet laser end pumped by a laser diode array
journal, October 1987

Single-Mode Lasing of Ho:Tm:YAG at 2.091 µm in a Monolithic Crystal
conference, January 1991

Two‐dimensional array of high‐power strained quantum well lasers with λ=0.95 μm
journal, June 1989

Diode laser-pumped solid-state lasers
journal, June 1988

Room-temperature diode-pumped Yb:YAG laser
journal, January 1991