Electrochemical thinning of silicon

Medernach, John W

Title: Electrochemical thinning of silicon

Abstract

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

Inventors:

Medernach, John W ^[1]

Albuquerque, NM

Issue Date:: 1994-01-01

Research Org.:: AT&T

OSTI Identifier:: 869119

Patent Number(s):: 5277769

Assignee:: United States of America as represented by Department of Energy (Washington, DC)

Patent Classifications (CPCs):: C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25F - PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25F - PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS
C25F3/12 - of semiconducting materials

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/30604 - {Chemical etching}
H01L21/30608 - {Anisotropic liquid etching
H01L21/3063 - Electrolytic etching

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/21 - Circular sheet or circular blank
Y10T428/216 - Ornamental, decorative, pattern, or indicia
Y10T428/218 - Aperture containing

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DOE Contract Number:: AC04-76DP00789

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: electrochemical; thinning; silicon; porous; semiconducting; material; formed; treatment; specimen; hydrofluoric; acid; anode; masked; etched; caustic; solution; oxidized; depending; structure; desired; thinned; patterned; insulated; electrical; conduits; subjected; tests; measurement; interstitial; oxygen; fourier; transform; infra-red; spectroscopy; ftir; caustic solution; hydrofluoric acid; conducting material; porous material; fourier transform; chemical treatment; semiconducting material; insulated electrical; /438/205/428/

Citation Formats


                    Medernach, John W. Electrochemical thinning of silicon.  United States: N. p., 1994. 
        Web.

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                    Medernach, John W. Electrochemical thinning of silicon.  United States.

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                    Medernach, John W. Sat .  
        "Electrochemical thinning of silicon".  United States.  https://www.osti.gov/servlets/purl/869119.

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@article{osti_869119,

  title        = {Electrochemical thinning of silicon},

  author       = {Medernach, John W},

  abstractNote = {Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1994},

  month        = {1}

}

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Works referenced in this record:

Determination of micro amounts of oxygen in silicon by inert-gas fusion
journal, October 1983

Huannan, H.
Talanta, Vol. 30, Issue 10
https://doi.org/10.1016/0039-9140(83)80174-X

SIMS Measurements of Oxygen in Heavily-Doped Silicon
journal, January 1985

Bleiler, R. J.; Hockett, R. S.; Chu, P.
MRS Proceedings, Vol. 59
https://doi.org/10.1557/PROC-59-73

Free Carrier Absorption and Interstitial Oxygen Measurements
book, January 1987

Gladden, W. K.; Baghdadi, A.
Emerging Semiconductor Technology
https://doi.org/10.1520/STP25775S

The Calibration and Reproducibility of Oxygen Concentration in Silicon Measurements using Sims Characterization Technique
book, January 1989

Goldstein, M.; Makovsky, J.
Semiconductor Fabrication: Technology and Metrology
https://doi.org/10.1520/STP26051S

Oxygen Precipitation in Heavily Doped Silicon
journal, February 1990

Bains, S. K.; Griffiths, D. P.; Wilkes, J. G.
Journal of The Electrochemical Society, Vol. 137, Issue 2
https://doi.org/10.1149/1.2086524

Direct Comparison of FTIR and SIMS Calibrations for [O] in Silicon
journal, January 1985

Chu, P. K.; Hockett, R. S.; Wilson, R. G.
MRS Proceedings, Vol. 59
https://doi.org/10.1557/PROC-59-67

Porosity Determinations in Buried and Surface Layers of Porous Silicon
journal, January 1987

Guilinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.
MRS Proceedings, Vol. 107
https://doi.org/10.1557/PROC-107-455

Infrared measurements of interstitial oxygen in heavily doped silicon
journal, June 1988

Oates, A. S.; Lin, W.
Journal of Crystal Growth, Vol. 89, Issue 1
https://doi.org/10.1016/0022-0248(88)90080-2

Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption
journal, January 1989

Baghdadi, A.; Bullis, W. M.; Croarkin, M. C.
Journal of The Electrochemical Society, Vol. 136, Issue 7
https://doi.org/10.1149/1.2097135

Correction Factors for the Determination of Oxygen in Silicon by IR Spectrometry
journal, July 1989

Schomann, F.; Graff, K.
Journal of The Electrochemical Society, Vol. 136, Issue 7
https://doi.org/10.1149/1.2097141

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Similar Records

Title: Electrochemical thinning of silicon

Abstract

Citation Formats

Determination of micro amounts of oxygen in silicon by inert-gas fusion journal, October 1983

SIMS Measurements of Oxygen in Heavily-Doped Silicon journal, January 1985

Free Carrier Absorption and Interstitial Oxygen Measurements book, January 1987

The Calibration and Reproducibility of Oxygen Concentration in Silicon Measurements using Sims Characterization Technique book, January 1989

Oxygen Precipitation in Heavily Doped Silicon journal, February 1990

Direct Comparison of FTIR and SIMS Calibrations for [O] in Silicon journal, January 1985

Porosity Determinations in Buried and Surface Layers of Porous Silicon journal, January 1987

Infrared measurements of interstitial oxygen in heavily doped silicon journal, June 1988

Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption journal, January 1989

Correction Factors for the Determination of Oxygen in Silicon by IR Spectrometry journal, July 1989

Determination of micro amounts of oxygen in silicon by inert-gas fusion
journal, October 1983

SIMS Measurements of Oxygen in Heavily-Doped Silicon
journal, January 1985

Free Carrier Absorption and Interstitial Oxygen Measurements
book, January 1987

The Calibration and Reproducibility of Oxygen Concentration in Silicon Measurements using Sims Characterization Technique
book, January 1989

Oxygen Precipitation in Heavily Doped Silicon
journal, February 1990

Direct Comparison of FTIR and SIMS Calibrations for [O] in Silicon
journal, January 1985

Porosity Determinations in Buried and Surface Layers of Porous Silicon
journal, January 1987

Infrared measurements of interstitial oxygen in heavily doped silicon
journal, June 1988

Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption
journal, January 1989

Correction Factors for the Determination of Oxygen in Silicon by IR Spectrometry
journal, July 1989