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Title: Electrochemical thinning of silicon

Abstract

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

Inventors:
 [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
AT&T
OSTI Identifier:
869119
Patent Number(s):
5277769
Assignee:
United States of America as represented by Department of Energy (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
electrochemical; thinning; silicon; porous; semiconducting; material; formed; treatment; specimen; hydrofluoric; acid; anode; masked; etched; caustic; solution; oxidized; depending; structure; desired; thinned; patterned; insulated; electrical; conduits; subjected; tests; measurement; interstitial; oxygen; fourier; transform; infra-red; spectroscopy; ftir; caustic solution; hydrofluoric acid; conducting material; porous material; fourier transform; chemical treatment; semiconducting material; insulated electrical; /438/205/428/

Citation Formats

Medernach, John W. Electrochemical thinning of silicon. United States: N. p., 1994. Web.
Medernach, John W. Electrochemical thinning of silicon. United States.
Medernach, John W. Sat . "Electrochemical thinning of silicon". United States. https://www.osti.gov/servlets/purl/869119.
@article{osti_869119,
title = {Electrochemical thinning of silicon},
author = {Medernach, John W},
abstractNote = {Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

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Works referenced in this record:

SIMS Measurements of Oxygen in Heavily-Doped Silicon
journal, January 1985


Oxygen Precipitation in Heavily Doped Silicon
journal, February 1990


Direct Comparison of FTIR and SIMS Calibrations for [O] in Silicon
journal, January 1985


Porosity Determinations in Buried and Surface Layers of Porous Silicon
journal, January 1987


Infrared measurements of interstitial oxygen in heavily doped silicon
journal, June 1988


Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption
journal, January 1989


Correction Factors for the Determination of Oxygen in Silicon by IR Spectrometry
journal, July 1989