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Title: Electrochemical thinning of silicon

Abstract

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

Inventors:
 [1]
  1. (Albuquerque, NM)
Issue Date:
Research Org.:
AT & T CORP
OSTI Identifier:
869119
Patent Number(s):
5277769
Assignee:
United States of America as represented by Department of Energy (Washington, DC) SNL
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
electrochemical; thinning; silicon; porous; semiconducting; material; formed; treatment; specimen; hydrofluoric; acid; anode; masked; etched; caustic; solution; oxidized; depending; structure; desired; thinned; patterned; insulated; electrical; conduits; subjected; tests; measurement; interstitial; oxygen; fourier; transform; infra-red; spectroscopy; ftir; caustic solution; hydrofluoric acid; conducting material; porous material; fourier transform; chemical treatment; semiconducting material; insulated electrical; /438/205/428/

Citation Formats

Medernach, John W. Electrochemical thinning of silicon. United States: N. p., 1994. Web.
Medernach, John W. Electrochemical thinning of silicon. United States.
Medernach, John W. Sat . "Electrochemical thinning of silicon". United States. https://www.osti.gov/servlets/purl/869119.
@article{osti_869119,
title = {Electrochemical thinning of silicon},
author = {Medernach, John W.},
abstractNote = {Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

Patent:

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