Electrochemical thinning of silicon
Abstract
Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 869119
- Patent Number(s):
- 5277769
- Assignee:
- United States of America as represented by Department of Energy (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25F - PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- electrochemical; thinning; silicon; porous; semiconducting; material; formed; treatment; specimen; hydrofluoric; acid; anode; masked; etched; caustic; solution; oxidized; depending; structure; desired; thinned; patterned; insulated; electrical; conduits; subjected; tests; measurement; interstitial; oxygen; fourier; transform; infra-red; spectroscopy; ftir; caustic solution; hydrofluoric acid; conducting material; porous material; fourier transform; chemical treatment; semiconducting material; insulated electrical; /438/205/428/
Citation Formats
Medernach, John W. Electrochemical thinning of silicon. United States: N. p., 1994.
Web.
Medernach, John W. Electrochemical thinning of silicon. United States.
Medernach, John W. Sat .
"Electrochemical thinning of silicon". United States. https://www.osti.gov/servlets/purl/869119.
@article{osti_869119,
title = {Electrochemical thinning of silicon},
author = {Medernach, John W},
abstractNote = {Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}
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