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Title: Method for anisotropic etching in the manufacture of semiconductor devices

Abstract

Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

Inventors:
 [1];  [2]
  1. Seabrook, TX
  2. Santa Fe, NM
Issue Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
OSTI Identifier:
869080
Patent Number(s):
5271800
Assignee:
United States of America as represented by Administrator of (Washington, DC)
Patent Classifications (CPCs):
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; anisotropic; etching; manufacture; semiconductor; devices; hydrocarbon; polymer; coatings; microelectronic; manufacturing; processes; anisotropically; etched; atomic; oxygen; beams; translational; energies; 2-20; preferably; 1-10; hyperthermal; kinetic; energy; atom; species; obtains; highly; sharp; boundaries; mask-protected; polymer coating; manufacturing process; semiconductor device; semiconductor devices; kinetic energy; atomic oxygen; polymer coatings; anisotropic etching; oxygen atom; anisotropically etched; manufacturing processes; /438/250/430/

Citation Formats

Koontz, Steven L, and Cross, Jon B. Method for anisotropic etching in the manufacture of semiconductor devices. United States: N. p., 1993. Web.
Koontz, Steven L, & Cross, Jon B. Method for anisotropic etching in the manufacture of semiconductor devices. United States.
Koontz, Steven L, and Cross, Jon B. Fri . "Method for anisotropic etching in the manufacture of semiconductor devices". United States. https://www.osti.gov/servlets/purl/869080.
@article{osti_869080,
title = {Method for anisotropic etching in the manufacture of semiconductor devices},
author = {Koontz, Steven L and Cross, Jon B},
abstractNote = {Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {1}
}

Patent:

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