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Title: Method for producing high quality oxide films on substrates

Abstract

A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.

Inventors:
 [1];  [2];  [3]
  1. Middle Island, NY
  2. Center Moriches, NY
  3. Henrietta, NY
Issue Date:
Research Org.:
Associated Universities, Inc., Upton, NY (United States)
OSTI Identifier:
869026
Patent Number(s):
5264394
Assignee:
Associated Universities, Inc. (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
AC02-76CH00016
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; producing; quality; oxide; films; substrates; providing; film; material; surface; substrate; reactive; deposition; presence; solid; liquid; layer; oxidizing; gas; provided; amount; sufficient; dissipate; latent; heat; condensation; occurring; creating; favorable; environment; liquid layer; latent heat; oxide films; oxidizing gas; substrate surface; oxide film; amount sufficient; quality oxide; reactive deposition; oxidizing environment; /438/148/427/

Citation Formats

Ruckman, Mark W, Strongin, Myron, and Gao, Yong L. Method for producing high quality oxide films on substrates. United States: N. p., 1993. Web.
Ruckman, Mark W, Strongin, Myron, & Gao, Yong L. Method for producing high quality oxide films on substrates. United States.
Ruckman, Mark W, Strongin, Myron, and Gao, Yong L. Fri . "Method for producing high quality oxide films on substrates". United States. https://www.osti.gov/servlets/purl/869026.
@article{osti_869026,
title = {Method for producing high quality oxide films on substrates},
author = {Ruckman, Mark W and Strongin, Myron and Gao, Yong L},
abstractNote = {A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {1}
}

Works referenced in this record:

Local atomic and electronic structure of oxide/GaAs and SiO 2 /Si interfaces using high‐resolution XPS
journal, September 1979


Comparative studies of oxygen adsorption on GaAs(110) surfaces with ultrathin aluminum and cesium overlayers
journal, September 1979


The oxidation of GaAs(110): A reevaluation
journal, January 1984


Initial oxidation and oxide/semiconductor interface formation on GaAs
journal, September 1979


Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces
journal, March 1989


Al on GaAs(110) interface: Possibility of adatom cluster formation
journal, October 1981


Growth of Al oxide layers on GaAs (100) by reaction with condensed molecular oxygen
journal, June 1990


Adsorption of O 2 and CO on cleaved GaAs(110) at low temperatures
journal, April 1983


Combined surface analysis by synchrotron radiation photoemission spectroscopy and surface extended x‐ray absorption fine structure of oxidation features of metal‐deposited GaAs
journal, May 1988

  • Oshima, Masaharu; Kawamura, Tomoaki; Maeyama, Satoshi
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 6, Issue 3
  • https://doi.org/10.1116/1.575724

UV photoemission study of low temperature oxygen adsorption on GaAs(110)
journal, January 1983


Photoemission studies of the interaction of Li and solid molecular oxygen
journal, March 1989


The formation of metal–oxygen species at low temperatures
journal, May 1990