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Title: Low temperature thin films formed from nanocrystal precursors

Abstract

Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000.degree. K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure.

Inventors:
 [1];  [2]
  1. (Berkeley, CA)
  2. (Oakland, CA)
Issue Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
OSTI Identifier:
869015
Patent Number(s):
5262357
Assignee:
Regents of University of California (Oakland, CA) LBNL
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
temperature; films; formed; nanocrystal; precursors; nanocrystals; semiconductor; compounds; produced; applied; contiguous; layer; substrate; heated; fuse; continuous; temperatures; 250; 500; 750; 1000; degree; below; bulk; melting; allows; 25; nm; thickness; range; minimal; thermal; exposure; semiconductor film; semiconductor compound; continuous layer; semiconductor films; minimal thermal; nanocrystal precursors; nm thick; /438/23/

Citation Formats

Alivisatos, A. Paul, and Goldstein, Avery N. Low temperature thin films formed from nanocrystal precursors. United States: N. p., 1993. Web.
Alivisatos, A. Paul, & Goldstein, Avery N. Low temperature thin films formed from nanocrystal precursors. United States.
Alivisatos, A. Paul, and Goldstein, Avery N. Fri . "Low temperature thin films formed from nanocrystal precursors". United States. https://www.osti.gov/servlets/purl/869015.
@article{osti_869015,
title = {Low temperature thin films formed from nanocrystal precursors},
author = {Alivisatos, A. Paul and Goldstein, Avery N.},
abstractNote = {Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000.degree. K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {1}
}

Patent:

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