Low temperature thin films formed from nanocrystal precursors
Abstract
Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000.degree. K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure.
- Inventors:
-
- (Berkeley, CA)
- (Oakland, CA)
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
- OSTI Identifier:
- 869015
- Patent Number(s):
- 5262357
- Assignee:
- Regents of University of California (Oakland, CA) LBNL
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- temperature; films; formed; nanocrystal; precursors; nanocrystals; semiconductor; compounds; produced; applied; contiguous; layer; substrate; heated; fuse; continuous; temperatures; 250; 500; 750; 1000; degree; below; bulk; melting; allows; 25; nm; thickness; range; minimal; thermal; exposure; semiconductor film; semiconductor compound; continuous layer; semiconductor films; minimal thermal; nanocrystal precursors; nm thick; /438/23/
Citation Formats
Alivisatos, A. Paul, and Goldstein, Avery N. Low temperature thin films formed from nanocrystal precursors. United States: N. p., 1993.
Web.
Alivisatos, A. Paul, & Goldstein, Avery N. Low temperature thin films formed from nanocrystal precursors. United States.
Alivisatos, A. Paul, and Goldstein, Avery N. Fri .
"Low temperature thin films formed from nanocrystal precursors". United States. https://www.osti.gov/servlets/purl/869015.
@article{osti_869015,
title = {Low temperature thin films formed from nanocrystal precursors},
author = {Alivisatos, A. Paul and Goldstein, Avery N.},
abstractNote = {Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000.degree. K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {1}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.