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Title: Microwave plasma assisted supersonic gas jet deposition of thin film materials

Abstract

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

Inventors:
;
Issue Date:
Research Org.:
Jet Process Corp., New Haven, CT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
868978
Patent Number(s):
5256205
Application Number:
07/817,518
Assignee:
Jet Process Corporation (New Haven, CT)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
FG02-88ER13818
Resource Type:
Patent
Resource Relation:
Patent File Date: 1992 Jan 07
Country of Publication:
United States
Language:
English
Subject:
/118/315/

Citation Formats

Schmitt, III, Jerome J., and Halpern, Bret L. Microwave plasma assisted supersonic gas jet deposition of thin film materials. United States: N. p., 1993. Web.
Schmitt, III, Jerome J., & Halpern, Bret L. Microwave plasma assisted supersonic gas jet deposition of thin film materials. United States.
Schmitt, III, Jerome J., and Halpern, Bret L. Fri . "Microwave plasma assisted supersonic gas jet deposition of thin film materials". United States. https://www.osti.gov/servlets/purl/868978.
@article{osti_868978,
title = {Microwave plasma assisted supersonic gas jet deposition of thin film materials},
author = {Schmitt, III, Jerome J. and Halpern, Bret L.},
abstractNote = {An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {1}
}

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