Microwave plasma assisted supersonic gas jet deposition of thin film materials
Abstract
An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.
- Inventors:
- Issue Date:
- Research Org.:
- Jet Process Corp., New Haven, CT (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 868978
- Patent Number(s):
- 5256205
- Application Number:
- 07/817,518
- Assignee:
- Jet Process Corporation (New Haven, CT)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- FG02-88ER13818
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 1992 Jan 07
- Country of Publication:
- United States
- Language:
- English
- Subject:
- /118/315/
Citation Formats
Schmitt, III, Jerome J., and Halpern, Bret L. Microwave plasma assisted supersonic gas jet deposition of thin film materials. United States: N. p., 1993.
Web.
Schmitt, III, Jerome J., & Halpern, Bret L. Microwave plasma assisted supersonic gas jet deposition of thin film materials. United States.
Schmitt, III, Jerome J., and Halpern, Bret L. Fri .
"Microwave plasma assisted supersonic gas jet deposition of thin film materials". United States. https://www.osti.gov/servlets/purl/868978.
@article{osti_868978,
title = {Microwave plasma assisted supersonic gas jet deposition of thin film materials},
author = {Schmitt, III, Jerome J. and Halpern, Bret L.},
abstractNote = {An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {1}
}
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Works referenced in this record:
Synthesis of diamond films in a rf induction thermal plasma
journal, September 1987
- Matsumoto, Seiichiro; Hino, Mototsugu; Kobayashi, Toyohiko
- Applied Physics Letters, Vol. 51, Issue 10