Multijunction photovoltaic device and fabrication method

Title: Multijunction photovoltaic device and fabrication method

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Abstract

A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.

Inventors:

Arya, Rajeewa R ^[1]; Catalano, Anthony W ^[2]

Jamison, PA
Furlong, PA

Issue Date:: 1993-09-21

OSTI Identifier:: 868930

Patent Number(s):: 5246506

Application Number:: 07/730,177

Assignee:: Solarex Corporation (Rockville, MD)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/076 - Multiple junction or tandem solar cells
H01L31/03765 - {including AIVBIV compounds or alloys, e.g. SiGe, SiC}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/548 - Amorphous silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/204 - {including AIVBIV alloys, e.g. SiGe, SiC}

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DOE Contract Number:: ZM-1-19033-3

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: multijunction; photovoltaic; device; fabrication; method; amorphous; silicon; cells; stacked; arrangement; interface; layer; composed; doped; compound; disposed; bandgap; respective; n-; p-type; adjacent; layers; forms; ohmic; contact; cell; conductivity; type; tunnel; junction; disclosed; fabricated; glow; discharge; process; silicon compound; multijunction photovoltaic; fabrication method; tunnel junction; photovoltaic cells; amorphous silicon; glow discharge; photovoltaic device; ohmic contact; photovoltaic cell; adjacent cell; doped silicon; conductivity type; adjacent layers; stacked arrangement; interface layer; cell layer; layer forms; discharge process; /136/438/

Citation Formats


                    Arya, Rajeewa R, and Catalano, Anthony W. Multijunction photovoltaic device and fabrication method.  United States: N. p., 1993. 
        Web.

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                    Arya, Rajeewa R, & Catalano, Anthony W. Multijunction photovoltaic device and fabrication method.  United States.

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                    Arya, Rajeewa R, and Catalano, Anthony W. Tue .  
        "Multijunction photovoltaic device and fabrication method".  United States.  https://www.osti.gov/servlets/purl/868930.

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@article{osti_868930,

  title        = {Multijunction photovoltaic device and fabrication method},

  author       = {Arya, Rajeewa R and Catalano, Anthony W},

  abstractNote = {A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1993},

  month        = {9}

}

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