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Title: Determination of interfacial states in solid heterostructures using a variable-energy positron beam

Abstract

A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial statesmore » of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.« less

Inventors:
 [1];  [2]
  1. (Coram, NY)
  2. (Center Moriches, NY)
Issue Date:
Research Org.:
ASSOC UNIVERSITIES INC
OSTI Identifier:
868733
Patent Number(s):
5200619
Assignee:
Associated Universities, Inc. (Washington, DC) BNL
DOE Contract Number:  
AC02-76CH00016
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
determination; interfacial; solid; heterostructures; variable-energy; positron; beam; method; means; provided; characterizing; electron; variable; energy; probe; heterostructure; steps; directing; selected; level; penetrates; causes; positrons; collide; electrons; interface; gamma; rays; emitted; result; annihilation; detected; data; quantified; function; doppler; broadening; photopeak; 511; kev; line; created; preferably; s-parameter; normalized; obtained; compared; corresponding; directed; material; portion; comparison; functions; facilitates; characterization; penetration; particular; levels; accordingly; provides; non-destructive; sio; semiconductor; devices; positron beam; gamma rays; energy level; gamma ray; semiconductor device; data obtained; semiconductor devices; solid heterostructure; energy levels; selected energy; variable energy; solid heterostructures; rays emitted; /250/

Citation Formats

Asoka kumar, Palakkal P. V., and Lynn, Kelvin G. Determination of interfacial states in solid heterostructures using a variable-energy positron beam. United States: N. p., 1993. Web.
Asoka kumar, Palakkal P. V., & Lynn, Kelvin G. Determination of interfacial states in solid heterostructures using a variable-energy positron beam. United States.
Asoka kumar, Palakkal P. V., and Lynn, Kelvin G. Fri . "Determination of interfacial states in solid heterostructures using a variable-energy positron beam". United States. https://www.osti.gov/servlets/purl/868733.
@article{osti_868733,
title = {Determination of interfacial states in solid heterostructures using a variable-energy positron beam},
author = {Asoka kumar, Palakkal P. V. and Lynn, Kelvin G.},
abstractNote = {A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {1}
}

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