Determination of interfacial states in solid heterostructures using a variable-energy positron beam
Abstract
A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial statesmore »
- Inventors:
-
- (Coram, NY)
- Center Moriches, NY
- Issue Date:
- Research Org.:
- Associated Universities, Inc., Upton, NY (United States)
- OSTI Identifier:
- 868733
- Patent Number(s):
- 5200619
- Assignee:
- Associated Universities, Inc. (Washington, DC)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- DOE Contract Number:
- AC02-76CH00016
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- determination; interfacial; solid; heterostructures; variable-energy; positron; beam; method; means; provided; characterizing; electron; variable; energy; probe; heterostructure; steps; directing; selected; level; penetrates; causes; positrons; collide; electrons; interface; gamma; rays; emitted; result; annihilation; detected; data; quantified; function; doppler; broadening; photopeak; 511; kev; line; created; preferably; s-parameter; normalized; obtained; compared; corresponding; directed; material; portion; comparison; functions; facilitates; characterization; penetration; particular; levels; accordingly; provides; non-destructive; sio; semiconductor; devices; positron beam; gamma rays; energy level; gamma ray; semiconductor device; data obtained; semiconductor devices; solid heterostructure; energy levels; selected energy; variable energy; solid heterostructures; rays emitted; /250/
Citation Formats
Asoka kumar, Palakkal P. V., and Lynn, Kelvin G. Determination of interfacial states in solid heterostructures using a variable-energy positron beam. United States: N. p., 1993.
Web.
Asoka kumar, Palakkal P. V., & Lynn, Kelvin G. Determination of interfacial states in solid heterostructures using a variable-energy positron beam. United States.
Asoka kumar, Palakkal P. V., and Lynn, Kelvin G. Fri .
"Determination of interfacial states in solid heterostructures using a variable-energy positron beam". United States. https://www.osti.gov/servlets/purl/868733.
@article{osti_868733,
title = {Determination of interfacial states in solid heterostructures using a variable-energy positron beam},
author = {Asoka kumar, Palakkal P. V. and Lynn, Kelvin G},
abstractNote = {A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {1}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Development and use of a thin‐film transmission positron moderator
journal, August 1985
- Lynn, K. G.; Nielsen, B.; Quateman, J. H.
- Applied Physics Letters, Vol. 47, Issue 3
Study of hydrogen interaction with SiO 2 /Si(100) system using positrons
journal, May 1991
- Asoka‐Kumar, P.; Lynn, K. G.; Leung, T. C.
- Journal of Applied Physics, Vol. 69, Issue 9
Reversible interaction of hydrogen with thin layers of thermally grown silicon dioxide
journal, June 1988
- Fare, T.; Spetz, A.; Armgarth, M.
- Journal of Applied Physics, Vol. 63, Issue 11
An investigation of the influence of low-temperature annealing treatments on the interface state density at the Si-SiO 2
journal, September 1975
- Yeow, Y. T.; Lamb, D. R.; Brotherton, S. D.
- Journal of Physics D: Applied Physics, Vol. 8, Issue 13
Defect annealing studies on metals by positron annihilation and electrical resitivity measurements
journal, February 1978
- Mantl, S.; Triftshäuser, W.
- Physical Review B, Vol. 17, Issue 4
Implantation profile of low‐energy positrons in solids
journal, October 1990
- Asoka‐Kumar, P.; Lynn, K. G.
- Applied Physics Letters, Vol. 57, Issue 16
Microvoids at the /Si interface
journal, July 1989
- Nielsen, Bent; Lynn, K. G.; Welch, D. O.
- Physical Review B, Vol. 40, Issue 2
Interaction of positron beams with surfaces, thin films, and interfaces
journal, July 1988
- Schultz, Peter J.; Lynn, K. G.
- Reviews of Modern Physics, Vol. 60, Issue 3
Interface state behaviour of plasma grown oxides following low temperature annealing
journal, October 1989
- Zhang, J. F.; Watkinson, P.; Taylor, S.
- Applied Surface Science, Vol. 39, Issue 1-4
Defects and Impurities at the Si/Si(100) Interface Studied with Monoenergetic Positrons
journal, July 1988
- Schultz, Peter J.; Tandberg, E.; Lynn, K. G.
- Physical Review Letters, Vol. 61, Issue 2
SiO 2 /Si interface probed with a variable‐energy positron beam
journal, September 1987
- Nielsen, Bent; Lynn, K. G.; Chen, Yen‐C
- Applied Physics Letters, Vol. 51, Issue 13
Hydrogen interaction with oxidized Si(111) probed with positrons
journal, August 1989
- Lynn, K. G.; Nielsen, Bent; Welch, D. O.
- Canadian Journal of Physics, Vol. 67, Issue 8