High rate chemical vapor deposition of carbon films using fluorinated gases
Abstract
A high rate, low-temperature deposition of amorphous carbon films is produced by PE-CVD in the presence of a fluorinated or other halide gas. The deposition can be performed at less than 100.degree. C., including ambient room temperature, with a radio frequency plasma assisted chemical vapor deposition process. With less than 6.5 atomic percent fluorine incorporated into the amorphous carbon film, the characteristics of the carbon film, including index of refraction, mass density, optical clarity, and chemical resistance are within fifteen percent (15%) of those characteristics for pure amorphous carbon films, but the deposition rates are high.
- Inventors:
-
- Arvada, CO
- Golden, CO
- Longmont, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 868715
- Patent Number(s):
- 5198263
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C03 - GLASS C03C - CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- S-68,637
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- rate; chemical; vapor; deposition; carbon; films; fluorinated; gases; low-temperature; amorphous; produced; pe-cvd; presence; halide; gas; performed; 100; degree; including; ambient; temperature; radio; frequency; plasma; assisted; process; atomic; percent; fluorine; incorporated; film; characteristics; index; refraction; mass; density; optical; clarity; resistance; fifteen; 15; pure; rates; plasma assisted; assisted chemical; temperature deposition; chemical resistance; amorphous carbon; atomic percent; radio frequency; chemical vapor; vapor deposition; deposition process; carbon film; deposition rate; carbon films; optical clarity; pure amorphous; mass density; deposition rates; halide gas; frequency plasma; low-temperature deposition; /427/
Citation Formats
Stafford, Byron L, Tracy, C Edwin, Benson, David K, and Nelson, Arthur J. High rate chemical vapor deposition of carbon films using fluorinated gases. United States: N. p., 1993.
Web.
Stafford, Byron L, Tracy, C Edwin, Benson, David K, & Nelson, Arthur J. High rate chemical vapor deposition of carbon films using fluorinated gases. United States.
Stafford, Byron L, Tracy, C Edwin, Benson, David K, and Nelson, Arthur J. Fri .
"High rate chemical vapor deposition of carbon films using fluorinated gases". United States. https://www.osti.gov/servlets/purl/868715.
@article{osti_868715,
title = {High rate chemical vapor deposition of carbon films using fluorinated gases},
author = {Stafford, Byron L and Tracy, C Edwin and Benson, David K and Nelson, Arthur J},
abstractNote = {A high rate, low-temperature deposition of amorphous carbon films is produced by PE-CVD in the presence of a fluorinated or other halide gas. The deposition can be performed at less than 100.degree. C., including ambient room temperature, with a radio frequency plasma assisted chemical vapor deposition process. With less than 6.5 atomic percent fluorine incorporated into the amorphous carbon film, the characteristics of the carbon film, including index of refraction, mass density, optical clarity, and chemical resistance are within fifteen percent (15%) of those characteristics for pure amorphous carbon films, but the deposition rates are high.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1993},
month = {Fri Jan 01 00:00:00 EST 1993}
}
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