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Title: Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets

Abstract

A method and apparatus for the rapid and economical deposition of uniform and high quality films upon a substrate for subsequent use in producing electronic devices, for example. The resultant films are either epitaxial (crystalline) or amorphous depending upon the incidence rate and the temperature and structure of the substrate. The deposition is carried out in a chamber maintained at about 10.sup.-6 Torr. A gaseous source of the material for forming the deposit is injected into the deposition chamber in the form of a pulsed supersonic jet so as to obtain a high incidence rate. The supersonic jet is produced by a pulsed valve between a relatively high presure reservoir, containing the source gaseous molecules, and the deposition chamber; the valve has a small nozzle orifice (e.g., 0.1-1.0 mm diameter). The type of deposit (crystalline amorphous) is then dependent upon the temperature and structure of the substrate. Very high deposition rates are achieved, and the deposit is very smooth and of uniform thickness. Typically the deposition rate is about 100 times that of much more expensive conventional molecular beam methods for deposition, and comparable to certain expensive plasma-assisted CVD methods of the art. The high growth rate of this methodmore » results in a reduced contamination of the deposit from other elements in the environment. The method is illustrated by the deposition of epitaxial and amorphour germanium films upon GaAs substrates.« less

Inventors:
 [1];  [2]
  1. Knoxville, TN
  2. Oak Ridge, TN
Issue Date:
Research Org.:
LOCKHEED MARTIN ENRGY SYST INC
OSTI Identifier:
868540
Patent Number(s):
5164040
Assignee:
Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; apparatus; rapidly; growing; films; substrates; pulsed; supersonic; jets; rapid; economical; deposition; uniform; quality; substrate; subsequent; producing; electronic; devices; example; resultant; epitaxial; crystalline; amorphous; depending; incidence; rate; temperature; structure; carried; chamber; maintained; 10; -6; torr; gaseous; source; material; forming; deposit; injected; form; jet; obtain; produced; valve; relatively; presure; reservoir; containing; molecules; nozzle; orifice; 1-1; diameter; type; dependent; rates; achieved; smooth; thickness; typically; 100; times; expensive; conventional; molecular; beam; methods; comparable; plasma-assisted; cvd; growth; results; reduced; contamination; elements; environment; illustrated; amorphour; germanium; gaas; growth rate; supersonic jet; uniform thickness; deposition chamber; molecular beam; electronic devices; deposition rate; gaas substrate; source gas; nozzle orifice; method results; electronic device; gaseous source; chamber maintained; rapidly growing; resultant film; gaas substrates; deposition rates; growing films; gaseous molecules; beam method; cvd method; /427/117/118/438/

Citation Formats

Eres, Diula, and Lowndes, Douglas H. Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets. United States: N. p., 1992. Web.
Eres, Diula, & Lowndes, Douglas H. Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets. United States.
Eres, Diula, and Lowndes, Douglas H. Wed . "Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets". United States. https://www.osti.gov/servlets/purl/868540.
@article{osti_868540,
title = {Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets},
author = {Eres, Diula and Lowndes, Douglas H},
abstractNote = {A method and apparatus for the rapid and economical deposition of uniform and high quality films upon a substrate for subsequent use in producing electronic devices, for example. The resultant films are either epitaxial (crystalline) or amorphous depending upon the incidence rate and the temperature and structure of the substrate. The deposition is carried out in a chamber maintained at about 10.sup.-6 Torr. A gaseous source of the material for forming the deposit is injected into the deposition chamber in the form of a pulsed supersonic jet so as to obtain a high incidence rate. The supersonic jet is produced by a pulsed valve between a relatively high presure reservoir, containing the source gaseous molecules, and the deposition chamber; the valve has a small nozzle orifice (e.g., 0.1-1.0 mm diameter). The type of deposit (crystalline amorphous) is then dependent upon the temperature and structure of the substrate. Very high deposition rates are achieved, and the deposit is very smooth and of uniform thickness. Typically the deposition rate is about 100 times that of much more expensive conventional molecular beam methods for deposition, and comparable to certain expensive plasma-assisted CVD methods of the art. The high growth rate of this method results in a reduced contamination of the deposit from other elements in the environment. The method is illustrated by the deposition of epitaxial and amorphour germanium films upon GaAs substrates.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {1}
}

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