Thick, low-stress films, and coated substrates formed therefrom, and methods for making same
Abstract
Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500.degree. C. or less.
- Inventors:
-
- (Kennewick, WA)
- Menomonee Falls, WI
- Issue Date:
- Research Org.:
- Battelle Memorial Institute, Columbus, OH (United States)
- OSTI Identifier:
- 868506
- Patent Number(s):
- 5156909
- Assignee:
- Battelle Memorial Institute (Richland, WA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC06-76RL01830
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- thick; low-stress; films; coated; substrates; formed; therefrom; methods; stress-induced; deformation; damage; resulting; increases; film; thickness; overcoming; excessive; stress; si-al-n; material; permits; formation; described; applications; subject; materials; specialized; views; optical; microelectronic; packaging; components; silicon; excellent; adherence; underlying; substrate; degree; hardness; durability; insulators; prior; elevated; temperature; deposition; processes; meet; constraints; process; conducted; non-elevated; conditions; typically; 500; temperature deposition; formed therefrom; film materials; coated substrates; underlying substrate; silicon substrates; temperature conditions; thick film; film thickness; elevated temperature; silicon substrate; deposition process; film material; deposition processes; coated substrate; substrates formed; temperature formation; thick films; resulting therefrom; damage resulting; stress-induced deformation; induced deformation; excessive stress; low-stress films; /428/
Citation Formats
Henager, Jr., Charles H., and Knoll, Robert W. Thick, low-stress films, and coated substrates formed therefrom, and methods for making same. United States: N. p., 1992.
Web.
Henager, Jr., Charles H., & Knoll, Robert W. Thick, low-stress films, and coated substrates formed therefrom, and methods for making same. United States.
Henager, Jr., Charles H., and Knoll, Robert W. Wed .
"Thick, low-stress films, and coated substrates formed therefrom, and methods for making same". United States. https://www.osti.gov/servlets/purl/868506.
@article{osti_868506,
title = {Thick, low-stress films, and coated substrates formed therefrom, and methods for making same},
author = {Henager, Jr., Charles H. and Knoll, Robert W},
abstractNote = {Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500.degree. C. or less.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {1}
}
Works referenced in this record:
Choice of dielectrics for TFEL displays
journal, January 1984
- Tiku, S. K.; Smith, G. C.
- IEEE Transactions on Electron Devices, Vol. 31, Issue 1