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Title: Thick, low-stress films, and coated substrates formed therefrom, and methods for making same

Abstract

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500.degree. C. or less.

Inventors:
 [1];  [2]
  1. (Kennewick, WA)
  2. (Menomonee Falls, WI)
Issue Date:
Research Org.:
BATTELLE MEMORIAL INSTITUTE
OSTI Identifier:
868506
Patent Number(s):
5156909
Assignee:
Battelle Memorial Institute (Richland, WA) PNNL
DOE Contract Number:  
AC06-76RL01830
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
thick; low-stress; films; coated; substrates; formed; therefrom; methods; stress-induced; deformation; damage; resulting; increases; film; thickness; overcoming; excessive; stress; si-al-n; material; permits; formation; described; applications; subject; materials; specialized; views; optical; microelectronic; packaging; components; silicon; excellent; adherence; underlying; substrate; degree; hardness; durability; insulators; prior; elevated; temperature; deposition; processes; meet; constraints; process; conducted; non-elevated; conditions; typically; 500; temperature deposition; formed therefrom; film materials; coated substrates; underlying substrate; silicon substrates; temperature conditions; thick film; film thickness; elevated temperature; silicon substrate; deposition process; film material; deposition processes; coated substrate; substrates formed; temperature formation; thick films; resulting therefrom; damage resulting; stress-induced deformation; induced deformation; excessive stress; low-stress films; /428/

Citation Formats

Henager, Jr., Charles H., and Knoll, Robert W. Thick, low-stress films, and coated substrates formed therefrom, and methods for making same. United States: N. p., 1992. Web.
Henager, Jr., Charles H., & Knoll, Robert W. Thick, low-stress films, and coated substrates formed therefrom, and methods for making same. United States.
Henager, Jr., Charles H., and Knoll, Robert W. Wed . "Thick, low-stress films, and coated substrates formed therefrom, and methods for making same". United States. https://www.osti.gov/servlets/purl/868506.
@article{osti_868506,
title = {Thick, low-stress films, and coated substrates formed therefrom, and methods for making same},
author = {Henager, Jr., Charles H. and Knoll, Robert W.},
abstractNote = {Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500.degree. C. or less.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {1}
}

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